Ordering of stacked InAs/GaAs quantum-wires in InAlAs/InGaAs matrix on (100) InP substrates

被引：8
作者：
Lin, Z. C. [1 ]
Lin, S. D. [1 ]
Lee, C. P. [1 ]
机构：
[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2008年 / 40卷 / 03期
关键词：
MBE; InP; quantum-wire;
D O I：
10.1016/j.physe.2007.07.005
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Stacked and wire-like InAs/GaAs nanostructures in InGaAs/InAlAs matrix on InP substrates were grown by molecular beam epitaxy (M BE) and investigated by atomic force microscope (AFM) and transmission electron microscope (TEM). Cross-sectional TEM images showed that the stacked InAs and GaAs quantum-wires in InGaAs matrix were vertically aligned to form a rectangular lattice. In contrast, in InAlAs matrix, the stacked InAs quantum-wires were cross-correlated to form a bcc like lattice. Clear composition modulation was observed in the post-grown matrix material. Based on this result, a kinetic growth model is proposed to explain the stacking behavior of the quantum-wires. (C) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：512 / 515
页数：4
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