6.5 kV-modules using IGBTs with field stop technology

被引：31

作者：

Bauer, JG ^{[1
]}

Auerbach, F ^{[1
]}

Porst, A ^{[1
]}

Roth, R ^{[1
]}

Ruething, H ^{[1
]}

Schilling, O ^{[1
]}

机构：

[1] Infineon Technol AG, D-81541 Munich, Germany

来源：

ISPSD'01: PROCEEDINGS OF THE 13TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS | 2001年

关键词：

D O I：

10.1109/ISPSD.2001.934571

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new 6.5 kV field stop IGBT/diode chipset is presented with a large safe operating area for 600 A module applications. The IGBT cell design and the vertical field stop structure is optimized with respect to a low on state voltage and low short circuit current. The turn on, turn off and short circuit ruggedness are experimentally demonstrated at 4.4kV line voltage and 125 degreesC temperature. The turn off behavior is verified at the twofold nominal current.

引用

页码：121 / 124

页数：4

共 7 条

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