Low-carrier-concentration crystals of the topological insulator Bi2Te2Se

被引：137
作者：
Jia, Shuang [1 ]
Ji, Huiwen [1 ]
Climent-Pascual, E. [1 ]
Fuccillo, M. K. [1 ]
Charles, M. E. [1 ]
Xiong, Jun [2 ]
Ong, N. P. [2 ]
Cava, R. J. [1 ]
机构：
[1] Princeton Univ, Dept Chem, Princeton, NJ 08544 USA
[2] Princeton Univ, Dept Phys, Princeton, NJ 08544 USA
来源：
PHYSICAL REVIEW B | 2011年 / 84卷 / 23期
基金：
美国国家科学基金会;
关键词：
SURFACE-STATES;
D O I：
10.1103/PhysRevB.84.235206
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We report the characterization of Bi2Te2Se crystals obtained by the modified Bridgman and Bridgman-Stockbarger crystal-growth techniques. X-ray-diffraction study confirms an ordered Se-Te distribution in the inner and outer chalcogen layers, respectively, with a small amount of mixing. The crystals displaying high resistivity (>1 Omega cm) and low carrier concentration (similar to 5 x 10(16)/cm(3)) at 4 K were found in the central region of the long Bridgman-Stockbarger crystal, which we attribute to very small differences in defect density along the length of the crystal rod. Analysis of the temperature-dependent resistivities and Hall coefficients reveals the possible underlying origins of the donors and acceptors in this phase.
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页数：7
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