Development of a 15 kV Bridge Rectifier Module Using 4H-SiC Junction-barrier Schottky Diodes

被引：14

作者：

Tipton, C. Wesley ^{[1
]}

Ibitayo, Dimeji ^{[1
]}

Urciuoli, Damian ^{[1
]}

Ovrebo, Gregory K. ^{[1
]}

机构：

[1] USA, Res Lab, Adelphi, MD 20783 USA

来源：

IEEE TRANSACTIONS ON DIELECTRICS AND ELECTRICAL INSULATION | 2011年 / 18卷 / 04期

关键词：

Schottky diodes; solid state rectifiers; semiconductor device packaging; partial discharges; dielectric breakdown; PROGRESS;

D O I：

10.1109/TDEI.2011.5976107

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

To demonstrate higher efficiency and more compact high-voltage power conversion systems, a 15 kV full-bridge rectifier module has been developed by the U. S. Army Research Laboratory. The module utilizes 15 kV, 3 A silicon carbide junction-barrier Schottky diodes manufactured by CREE Inc. In this paper, we will present the analyses, design, and characterization of this module using conventional materials and processes and introduce a novel technique to reduce electric field stress and associated failure modes.

引用

页码：1137 / 1142

页数：6

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