Electrical properties of x-ray detector based on bismuth tri-iodide single crystal with electrode configuration considering

被引：19
作者：
Liu, Yizhen [1 ]
Sun, Hui [1 ,3 ]
Yang, Dingyu [1 ]
Wangyang, Peihua [1 ]
Gao, Xiuying [1 ,3 ]
Gou, Zongyan [1 ]
Zhu, Xinghua [2 ]
机构：
[1] Chengdu Univ Informat Technol, Coll Optoelect Technol, Chengdu 610225, Sichuan, Peoples R China
[2] Sichuan Univ Arts & Sci, Sch Intelligent Mfg, Dazhou 635000, Peoples R China
[3] Sichuan Univ, Dept Mat Sci, Chengdu 610065, Sichuan, Peoples R China
来源：
MATERIALS RESEARCH EXPRESS | 2019年 / 6卷 / 05期
关键词：
single crystal; x-ray detector; electrode configuration; BiI3; GROWTH; FILMS; TRANSPORT; CDTE; FABRICATION;
D O I：
10.1088/2053-1591/aaff87
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Bismuth tri-iodide (BiI3) single crystals for x-ray detectors application were grown by using physical vapor transport method. Detectors with different electrode configuration were fabricated for electrical and x-ray detection performance measurements. Electrical anisotropy including resistivity, dark current, carrier transport and x-ray induced photoelectricity properties was obtained. Carrier scattering effect deriving from lattice structure, combination bond, dislocation and stacking fault is responsible for the anisotropy properties. Dark current of the detectors with electrical field parallel (E//c) and perpendicular (E perpendicular to c) to crystal c-axis were obtained as 0.5 pA and 2.1 pA, respectively. A remarkable signal-to-noise ratio of 896.4 and the sensitivity up to 0.526 x 10(4) mu C Gy(-1) cm(-2) are achieved in E perpendicular to c-axis configuration under 0.02 V mu m(-1) DC electric field and x-ray exposure dosage rate of 489.78 mu Gy h(-1).
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页数：8
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