Fabrication and characterization of a Pb5Ge3O11 one-transistor-memory device

被引：28

作者：

Li, TK ^{[1
]}

Hsu, ST ^{[1
]}

Ulrich, B ^{[1
]}

Ying, H ^{[1
]}

Stecker, L ^{[1
]}

Evans, D ^{[1
]}

Ono, Y ^{[1
]}

Maa, JS ^{[1
]}

Lee, JJ ^{[1
]}

机构：

[1] Sharp Labs Amer Inc, Camas, WA 98607 USA

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 11期

关键词：

D O I：

10.1063/1.1401092

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A Pb5Ge3O11 metal-ferroelectric-metal-oxide-silicon memory transistor has been fabricated. The device showed a memory window of about 2 V. The memory window was almost saturated at the operation voltage of 2 V. The "off" state drain current (I-D) at V-D of 0.1 V and V-G of 0.5 V is about 1x10(-8) A. The "on" state drain current (I-D) at V-D of 0.1 V and V-G of 0.5 V is about 1x10(-6) A, which is 100 times high than that of off state. (C) 2001 American Institute of Physics.

引用

页码：1661 / 1663

页数：3

共 11 条

[1]

Brown WL., 1957, US Patent, Patent No. 2791759

[2] Properties of ferroelectric memory FET using Sr2(Ta, Nb)2O7 thin film [J].