Ultrathin limit and dead-layer effects in local polarization switching of BiFeO3

被引:69
作者
Maksymovych, Peter [1 ]
Huijben, Mark [2 ,3 ,4 ]
Pan, Minghu [1 ]
Jesse, Stephen [1 ]
Balke, Nina [1 ]
Chu, Ying-Hao [5 ]
Chang, Hye Jung [6 ]
Borisevich, Albina Y. [6 ]
Baddorf, Arthur P. [1 ]
Rijnders, Guus [2 ]
Blank, Dave H. A. [2 ]
Ramesh, Ramamoorthy [3 ,4 ]
Kalinin, Sergei V. [1 ]
机构
[1] Oak Ridge Natl Lab, Ctr Nanophase Mat Sci, Oak Ridge, TN 37831 USA
[2] Univ Twente, Fac Sci & Technol, MESA Inst Nanotechnol, NL-7500 AE Enschede, Netherlands
[3] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA
[4] Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA
[5] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 30010, Taiwan
[6] Oak Ridge Natl Lab, Div Mat Sci & Technol, Oak Ridge, TN 37831 USA
来源
PHYSICAL REVIEW B | 2012年 / 85卷 / 01期
关键词
PHASE-TRANSITIONS; TUNNEL-JUNCTIONS; PEROVSKITE FILMS; COERCIVE FIELD; FERROELECTRICITY; PHYSICS; THICKNESS; BARRIERS; SURFACE; STATES;
D O I
10.1103/PhysRevB.85.014119
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Using piezoresponse force microscopy in an ultrahigh vacuum, polarization switching has been detected and quantified in epitaxial BiFeO3 films from 200 to about 4 unit cells thick. Local remnant piezoresponse was utilized to probe both ferroelectric properties and effects of imperfect electrical contacts. It was found that the shape of electromechanical hysteresis loops is strongly influenced by an extrinsic dielectric gap, primarily through the suppressing effect of the depolarizing field on the spontaneous polarization in the ultrathin films. Furthermore, statistical analysis of the hysteresis loops has revealed lateral variation of the extrinsic dielectric gap with sub-10-nm resolution. Robust and reproducible ferroelectric properties of nanoscale BiFeO3 indicate its potential for nanoscale applications in information storage and spintronics.
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页数:8
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