Electronic transport in monolayer graphene with extreme physical deformation: ab initio density functional calculation

被引：11

作者：

Xu, Yang ^{[1
]}

Gao, Haiyuan ^{[1
]}

Li, Meijiao ^{[1
]}

Guo, Zhendong ^{[1
]}

Chen, Hongshen ^{[1
]}

Jin, Zhonghe ^{[1
]}

Yu, Bin ^{[2
]}

机构：

[1] Zhejiang Univ, Dept Informat Sci & Elect Engn, Hangzhou 310027, Peoples R China

[2] SUNY Albany, Coll Nanoscale Sci & Engn, Albany, NY 12203 USA

来源：

NANOTECHNOLOGY | 2011年 / 22卷 / 36期

基金：

美国国家科学基金会;

关键词：

PILLARED GRAPHENE; NANOSTRUCTURE; NANORIBBONS; SHEETS;

D O I：

10.1088/0957-4484/22/36/365202

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The electronic transport properties of monolayer graphene with extreme physical deformation are studied using ab initio calculations. The aim is to explore the influence of physical bending on transport properties and identify the most important geometrical parameter. The transmission spectra are relatively insensitive to the geometrical parameters in low-energy regions-even in the extreme case of uniaxial bending. The results suggest that graphene, with its superb electromechanical robustness, could serve as a viable nanoscale material platform in a wide spectrum of applications such as photovoltaics, flexible electronics, and 3D carbon chips.

引用

页数：4

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