Perpendicular anisotropy of Co3Pt deposited on the NiFeMo/Ru buffer

被引：6

作者：

Lee, Duhyun ^{[1
]}

Lim, T. W. ^{[1
]}

Jeong, G. H. ^{[1
]}

Suh, S. J. ^{[1
]}

Yoon, S. Y. ^{[2
]}

机构：

[1] Sungkyunkwan Univ, AMPIT, Suwon 440746, South Korea

[2] Samsung Adv Inst Technol, Storage Lab, Yongin 449712, South Korea

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2006年 / 304卷 / 01期

关键词：

Perpendicular mangetic anisotropy; Co3Pt; Chemical order;

D O I：

10.1016/j.jmmm.2006.01.179

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The multilayer of Ta/NiFeMo/Ru/Co3Pt was sputter deposited on the Si (100) wafer. Using the NiFeMo buffer layer greatly enhanced the texture of Co3Pt layer. The enhanced texture increased the perpendicular magnetic anisotropy of Co3Pt. According to the VSM and XRD results, only the 5 nm of NiFeMo was good enough to produce the texture and perpendicular anisotropy in Co3Pt layer. The perpendicular anisotropy was attributed to the existence of short-range-ordered HCP structure of Co3Pt. (C) 2006 Elsevier B.V. All rights reserved.

引用

页码：E59 / E61

页数：3

共 5 条

[1] Fabrication and properties of CoPt patterned media with perpendicular magnetic anisotropy [J].