Quantitative determination of the dopant distribution in Si ultrashallow junctions by tilted sample annular dark field scanning transmission electron microscopy

被引：14

作者：

Parisini, A. ^{[1
]}

Morandi, V. ^{[1
]}

Solmi, S. ^{[1
]}

Merli, P. G. ^{[1
]}

Giubertoni, D. ^{[3
]}

Bersani, M. ^{[3
]}

van den Berg, J. A. ^{[2
]}

机构：

[1] Sezione Bologna, CNR, IMM, I-40129 Bologna, Italy

[2] Univ Salford, Inst Mat Res, Salford M5 4WT, Lancs, England

[3] Fdn Bruno Kessler Irst, I-38050 Trento, Italy

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 26期

关键词：

D O I：

10.1063/1.2951896

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this letter, it is shown how the application of a Z-contrast scanning transmission electron microscopy technique to the study of the dopant signal in ultrashallow junctions in Si can lead, in the case of As in Si, to a quantitative determination of the dopant depth profile at subnanometer resolution. The quantitative results thus obtained demonstrate that As accumulates on the Si side of the SiO(2)/Si interface with a negligible loss of dopant into the oxide. Modeling of the effect indicates that segregation occurring during the recrystallization of the implanted layer is the dominant cause of this dopant pileup. (c) 2008 American Institute of Physics.

引用

页数：3

共 14 条

[1] Mechanism of dopant segregation to SiO2/Si(001) interfaces -: art. no. 245305 [J].