A Compact 77% Fractional Bandwidth CMOS Band-Pass Distributed Amplifier With Mirror-Symmetric Norton Transforms

被引：19
作者：
Bhagavatula, Venumadhav [1 ]
Taghivand, Mazhareddin [2 ]
Rudell, Jacques Christophe [2 ]
机构：
[1] Samsung Semicond Inc, San Jose, CA 95112 USA
[2] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA
来源：
IEEE JOURNAL OF SOLID-STATE CIRCUITS | 2015年 / 50卷 / 05期
关键词：
Band-pass filters; coplanar waveguide; distributed amplifier; millimeter-wave circuits; Norton transform; LOW-NOISE AMPLIFIER; GB/S WIRELESS;
D O I：
10.1109/JSSC.2015.2408322
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents the design of a high fractional-bandwidth millimeter-wave band-pass distributed amplifier (BPDA) implemented in a 40 nm (LP) CMOS process. A high-order load impedance with multiple resonant elements is often used to realize wideband amplifiers. However, these implementations require the use of numerous inductors which occupy a prohibitively large amount of silicon area. A mirror-symmetric Norton transformation technique which reduces inductor component values for a wideband amplifier, allowing an area-efficient layout, is described in this paper. The BPDA consumes 34 mW while providing a power-gain of 7 dB from 24-to-54 GHz with less than 2 dB in-band gain-variation. The BPDA has a measured 77% fractional bandwidth, a + 11 dBm in-band IIP3, and an in-band noise-figure less than 6.2 dB, while occupying an area of 0.15 mm(2).
引用
收藏
页码：1085 / 1093
页数：9
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