Theoretical and experimental investigation of gigahertz-band, temperature-compensated electromechanical coupling configurations based on AIN films

被引：25

作者：

Caliendo, Cinzia ^{[1
]}

机构：

[1] CNR, Ist Sistemi Complessi, I-00133 Rome, Italy

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 03期

关键词：

D O I：

10.1063/1.2837179

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Highly c-axis oriented piezoelectric AlN films were sputtered on (0001) Al2O3 substrates and four gigahertz-range surface acoustic wave (SAW) electroacoustic coupling configurations were realized by conventional photolithographic process. The thermal sensitivity of each device was experimentally estimated and found in good accordance with the theoretical predictions. Eight gigahertz-range, thermally compensated SAW devices were obtained for specific AlN thickness, SAW propagation direction, and electrical boundary conditions. A theoretical analysis of the acoustic and electrical behavior of the four coupling structures is proposed to match the achievable performances of the SAW devices with the design requirements. (C) 2008 American Institute of Physics.

引用

页数：3

共 17 条

[11]

Morkoc H., 1999, NITRIDE SEMICONDUCTO

[12] Surface acoustic wave propagation in aluminum nitride-unpolished freestanding diamond structures [J].

Mortet, V ;

Elmazria, O ;

Nesladek, M ;

Assouar, MB ;

Vanhoyland, G ;

D'Haen, J ;

D'Olieslaeger, M ;

Alnot, P .

APPLIED PHYSICS LETTERS, 2002, 81 (09) :1720-1722

[13]

Ristic Velimir M., 1983, PRINCIPLES ACOUSTIC

[14] Superhigh-frequency surface-acoustic-wave transducers using AlN layers grown on SiC substrates [J].

Takagaki, Y ;

Santos, PV ;

Wiebicke, E ;

Brandt, O ;

Schönherr, HP ;

Ploog, KH .

APPLIED PHYSICS LETTERS, 2002, 81 (14) :2538-2540

[15] ZERO-TEMPERATURE-COEFFICIENT SAW DEVICES ON ALN EPITAXIAL-FILMS [J].

TSUBOUCHI, K ;

MIKOSHIBA, N .

IEEE TRANSACTIONS ON SONICS AND ULTRASONICS, 1985, 32 (05) :634-644

[16]

TSUBOUCHI K, 1982, P IEEE ULTR S IEEE N, P340

[17]

Yang CM, 2003, ULTRASON, P170

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