Single impurity effect on the melting of nanoclusters

被引:167
作者
Mottet, C
Rossi, G
Baletto, F
Ferrando, R
机构
[1] CNRS, CRMCN, F-13288 Marseille, France
[2] Univ Genoa, Dipartimento Fis, INFM, I-16146 Genoa, Italy
[3] Univ Genoa, Dipartimento Fis, CNR, IMEM, I-16146 Genoa, Italy
[4] Abdus Salaam Int Ctr Theoret Phys, I-34014 Trieste, Italy
关键词
D O I
10.1103/PhysRevLett.95.035501
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We show by molecular dynamics simulations that the melting temperature of clusters can be tuned by selective doping. In fact, a single Ni or Cu impurity in Ag icosahedral clusters considerably increases the melting temperature even for sizes of more than a hundred atoms. The upward shift is correlated to the strain relaxation induced by a small central impurity in icosahedral clusters.
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页数:4
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