Nanosecond semiconductor diodes for pulsed power switching

被引：67
作者：
Grekhov, IV
Mesyats, GA
机构：
[1] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
[2] Russian Acad Sci, PN Lebedev Phys Inst, Moscow 119991, Russia
来源：
PHYSICS-USPEKHI | 2005年 / 48卷 / 07期
关键词：
D O I：
10.1070/PU2005v048n07ABEH002471
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The development of semiconductor-based nano- and subnanosecond high current breakers is crucial for advancing modern research in experimental physics and radioelectronics, particularly with increasing power (to 10(10) W) and repetition rate (to 10(4) Hz) of impulse devices. Highlighted in this review are two types of silicon diodes: drift step recovery diodes (DSRDs) and SOS diodes with the attainable current densities and switched-off powers being 10(2) A cm(-2) and 10(8) W in the former case, and 10(5) A cm(-2) and 10(10) W in the latter. The possibility of utilizing not only monocrystalline silicon (as in DSRDs and SOS diodes) for the base material but also monocrystalline silicon carbide is examined.
引用
收藏
页码：703 / 712
页数：10
相关论文
共 28 条
  • [1] [Anonymous], 2004, IMPULSNAYA ENERGETIK
  • [2] REVERSE RECOVERY PROCESSES IN SILICON POWER RECTIFIERS
    BENDA, H
    SPENKE, E
    [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (08): : 1331 - &
  • [3] BOFF A, 1960, 3 INT SOL STAT CIRC, P50
  • [4] Dynamics of electron-hole plasma in semiconductor opening switches for ultradense currents
    Darznek, SA
    Mesyats, GA
    Rukin, SN
    [J]. TECHNICAL PHYSICS, 1997, 42 (10) : 1170 - 1175
  • [5] Effect of structure doping profile on the current switching-off process in power semiconductor opening switches
    Darznek, SA
    Rukin, SN
    Tsiranov, SN
    [J]. TECHNICAL PHYSICS, 2000, 45 (04) : 436 - 442
  • [6] DARZNEK SA, 1996, P 11 INT C HIGH POW, V2, P1241
  • [7] EFANOV VM, 1997, 11 IEEE INT PULS POW, V2, P985
  • [8] EREMIN SA, 1966, POLUPROVODNIKOVYE PR
  • [9] Grekhov I. V., 1983, Soviet Physics - Technical Physics, V28, P459
  • [10] Grekhov I.V., 1983, PISMA ZH TEKH FIZ, V9, P435
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