Generation of Terahertz Radiation by a Surface Ballistic Photocurrent in Semiconductors under Subpicosecond Laser Excitation

被引：5

作者：

Ziaziulia, P. A. ^{[1
]}

Malevich, V. L. ^{[2
]}

Manak, I. S. ^{[1
]}

Krotkus, A. ^{[3
]}

机构：

[1] Belarusian State Univ, Minsk 220030, BELARUS

[2] Natl Acad Sci Belarus, Stepanov Inst Phys, Minsk 220072, BELARUS

[3] Ctr Phys Sci & Technol, LT-01108 Vilnius, Lithuania

来源：

SEMICONDUCTORS | 2012年 / 46卷 / 02期

关键词：

Terahertz Radiation; Photoexcited Electron; Azimuthal Anisotropy; Terahertz Pulse; Laboratory Reference Frame;

D O I：

10.1134/S1063782612020261

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

An analytical model describing the onset of a surface ballistic photocurrent in cubic semiconductors under femtosecond laser excitation is proposed. It is shown that the contribution of the photocurrent component parallel to the surface to the generation of terahertz pulses may be comparable to the contribution of the perpendicular component. Consideration of the cubic symmetry of a semiconductor leads to the azimuthal anisotropy of terahertz generation.

引用

页码：143 / 148

页数：6

共 12 条

[1] Terahertz emission from p-InAs due to the instantaneous polarization [J].