Photoluminescence origins of the porous silicon nanowire arrays

We investigate the photoluminescence (PL) behavior of the porous silicon nanowire (PSiNW) arrays synthesized via metal-assisted electroless etching method on the n-Si (100) substrate. Two PL bands with different origins dependent on the post-chemical treatments were detected. The red emission band, the peak position of which is insensitive to temperature and excitation source, is considered to originate from the excitons localized at the interface between the Si nanostructure and the oxide layer. An anomalous blue shift of the near-infrared PL band was observed when the temperature increased from 80 to 290 K. The maximum intensity appears around 160 K and the emission energy is strongly dependent on the excitation energy and power. The triplet-singlet state transition is introduced to explain the PL behavior for this emission band. The absorption spectra are also induced to confirm the PL origins. (C) 2011 American Institute of Physics. [doi:10.1063/1.3645049]