Dielectric properties of Ta2O5-SiO2 polycrystalline ceramics

The dielectric properties of (Ta2O5)(1-x)(SiO2)(x) polycrystalline ceramics for 0.0 less than or equal to x less than or equal to 0.20 are reported. Measurements were made at 1 MHz and temperature between -40 and +100 degrees C. The dielectric properties are not very sensitive to SiO2 content. A moderate enhancement of the dielectric constant is found, from -30 for pure Ta2O5 to similar to 45 at x similar or equal to 0.10. The temperature coefficient of dielectric constant in the vincinity of room temperature decreases from similar to 200 ppm/degrees C for Ta2O5 to similar to 75 ppm/degrees C for x=0.14. (C) 1996 American Institute of Physics.