Complementary circuits with organic transistors

被引：102
作者：
Dodabalapur, A
Laquindanum, J
Katz, HE
Bao, Z
机构：
[1] Bell Laboratories, Lucent Technologies, Murray Hill, NJ
来源：
APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 27期
关键词：
D O I：
10.1063/1.116953
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The operating characteristics of complementary inverters with n-channel napthalenetetracarboxylic dianhydride thin-film transistors (TFTs) and p-channel transistors with hole transporting organic active materials are described. The n-channel TFTs have been used as the load in one circuit configuration and as the driver in the second configuration. (C) 1996 American Institute of Physics.
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页码：4227 / 4229
页数：3
相关论文
共 17 条
[1]  
BAO Z, IN PRESS APPL PHYS L
[2]   LOGIC GATES MADE FROM POLYMER TRANSISTORS AND THEIR USE IN RING OSCILLATORS [J].
BROWN, AR ;
POMP, A ;
HART, CM ;
DELEEUW, DM .
SCIENCE, 1995, 270 (5238) :972-974
[3]   ORGANIC TRANSISTORS - 2-DIMENSIONAL TRANSPORT AND IMPROVED ELECTRICAL CHARACTERISTICS [J].
DODABALAPUR, A ;
TORSI, L ;
KATZ, HE .
SCIENCE, 1995, 268 (5208) :270-271
[4]   ORGANIC HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS [J].
DODABALAPUR, A ;
KATZ, HE ;
TORSI, L ;
HADDON, RC .
SCIENCE, 1995, 269 (5230) :1560-1562
[5]   Organic field-effect bipolar transistors [J].
Dodabalapur, A ;
Katz, HE ;
Torsi, L ;
Haddon, RC .
APPLIED PHYSICS LETTERS, 1996, 68 (08) :1108-1110
[6]  
DODABALAPUR A, 1996, APPL PHYS LETT, V68, P2264
[7]   POLYTHIENYLENEVINYLENE THIN-FILM-TRANSISTOR WITH HIGH CARRIER MOBILITY [J].
FUCHIGAMI, H ;
TSUMURA, A ;
KOEZUKA, H .
APPLIED PHYSICS LETTERS, 1993, 63 (10) :1372-1374
[8]   ALL-POLYMER FIELD-EFFECT TRANSISTOR REALIZED BY PRINTING TECHNIQUES [J].
GARNIER, F ;
HAJLAOUI, R ;
YASSAR, A ;
SRIVASTAVA, P .
SCIENCE, 1994, 265 (5179) :1684-1686
[9]   C-60 THIN-FILM TRANSISTORS [J].
HADDON, RC ;
PEREL, AS ;
MORRIS, RC ;
PALSTRA, TTM ;
HEBARD, AF ;
FLEMING, RM .
APPLIED PHYSICS LETTERS, 1995, 67 (01) :121-123
[10]   Evidence for n-type conduction in a perylene tetracarboxylic diimide derivative [J].
Horowitz, G ;
Kouki, F ;
Spearman, P ;
Fichou, D ;
Nogues, C ;
Pan, X ;
Garnier, F .
ADVANCED MATERIALS, 1996, 8 (03) :242-&
12