Influence of oxygen concentration in the CdCl2 treatment process on the photovoltaic properties of CdTe/CdS solar cells

被引：25

作者：

Regalado-Perez, E. ^{[1
]}

Reyes-Banda, Martin G. ^{[1
]}

Mathew, X. ^{[1
]}

机构：

[1] Univ Nacl Autonoma Mexico, Inst Energias Renovables, Temixco 62580, Morelos, Mexico

来源：

THIN SOLID FILMS | 2015年 / 582卷

关键词：

Cadmium sulfide; Cadmium telluride; Solar cells; Cadmium chloride treatment; Capacitance-voltage measurements; ELECTRICAL-PROPERTIES; GRAIN-BOUNDARIES; BACK CONTACT; DEEP-LEVEL; RECRYSTALLIZATION; DIFFUSION; THICKNESS;

D O I：

10.1016/j.tsf.2014.11.005

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effect of oxygen during the CdCl2 treatment on the optoelectronic properties of CdTe/CdS devices was studied. Higher efficiencies and greater uniformity in device performance were obtained for samples processed with higher amount of oxygen. Oxygen in the activation ambient caused an increase in the net carrier concentration near the back contact of CdTe, which ultimately seems to saturate around 5.5 x 10(15) cm(-3) when the O-2 concentration is 50%. However, the carrier concentration reduces by two orders of magnitude from the back contact to bulk CdTe. The important role of oxygen in CdCl2 treatment is that it controls the diffusion of Cu. The disappearance of dark and light current-voltage crossover for devices annealed at higher concentration of O-2 is due to the oxidation of grain boundaries thereby blocking the diffusion of Cu towards the CdS buffer. The capacitance-voltage profiles suggest that the CdTe/CdS cell behaves more like a p-i-n than p-n device. (C) 2014 Elsevier B.V. All rights reserved.

引用

页码：134 / 138

页数：5

共 37 条

[1] ISOELECTRONIC OXYGEN IN II-VI SEMICONDUCTORS [J].

AKIMOTO, K ;

OKUYAMA, H ;

IKEDA, M ;

MORI, Y .

APPLIED PHYSICS LETTERS, 1992, 60 (01) :91-93

[2] Electrical characterization of vacuum-deposited n-CdS/p-CdTe heterojunction devices [J].

Bayhan, H ;

Ercelebi, C .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1997, 12 (05) :600-608

[3] Cadmium-telluride - Material for thin film solar cells [J].

Bonnet, D ;

Meyers, P .

JOURNAL OF MATERIALS RESEARCH, 1998, 13 (10) :2740-2753

[4] Optical response of deep defects as revealed by transient photocapacitance and photocurrent spectroscopy in CdTe/CdS solar cells [J].

Boucher, J. W. ;

Miller, D. W. ;

Warren, C. W. ;

Cohen, J. D. ;

McCandless, B. E. ;

Heath, J. T. ;

Lonergan, M. C. ;

Boettcher, S. W. .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2014, 129 :57-63

[5]

Demtsu S, 2006, WORL CON PHOTOVOLT E, P523

[6] In situ oxygen incorporation and related issues in CdTe/CdS photovoltaic devices [J].

Emziane, M. ;

Durose, K. ;

Halliday, D. P. ;

Bosio, A. ;

Romeo, N. .

JOURNAL OF APPLIED PHYSICS, 2006, 100 (01)

[7] Influence of the thickness on structural, optical and electrical properties of chemical bath deposited CdS thin films [J].

Enríguez, JP ;

Mathew, X .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2003, 76 (03) :313-322

[8] Possible effects of oxygen in Te-rich Σ3 (112) grain boundaries in CdTe [J].

Feng, Chunbao ;

Yin, Wan-Jian ;

Nie, Jinlan ;

Zu, Xiaotao ;

Huda, Muhammad N. ;

Wei, Su-Huai ;

Al-Jassim, Mowafak M. ;

Yon, Yanfa .

SOLID STATE COMMUNICATIONS, 2012, 152 (18) :1744-1747

[9] High efficiency CSSCdTe solar cells [J].

Ferekides, CS ;

Marinskiy, D ;

Viswanathan, V ;

Tetali, B ;

Palekis, V ;

Selvaraj, P ;

Morel, DL .

THIN SOLID FILMS, 2000, 361 (361) :520-526

[10]

First Solar Inc, 1 SOL SETS WORLD REC

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