Long-wavelength type-II photodiodes operating at room temperature

被引：31

作者：

Mohseni, H ^{[1
]}

Razeghi, M ^{[1
]}

机构：

[1] Northwestern Univ, Dept Elect & Comp Engn, Ctr Quantum Devices, Evanston, IL 60208 USA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2001年 / 13卷 / 05期

关键词：

infrared detectors; infrared imaging; photodiodes; semiconductor devices; superlattices;

D O I：

10.1109/68.920771

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The operation of uncooled InAs-GaSb superlattice photodiodes with a cutoff wavelength of lambda (c) = 8 mum and a peak detectivity of 1.2 x 10(8) cmHz(1)/(2)/W at zero bias is demonstrated. The detectivity is similar to the best uncooled HgCdTe detectors and microbolometers, However, the R(0)A product is more than two orders of magnitude higher than HgCdTe and the device is more than four orders of magnitude faster than microbolometers, These features combined with their low 1/f noise and high uniformity make these type-II photodiodes an excellent choice for uncooled high-speed IR imaging arrays.

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收藏

页码：517 / 519

页数：3

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