A new a-Si:H thin-film transistor pixel circuit for active-matrix organic light-emitting diodes

被引：71

作者：

Goh, JC ^{[1
]}

Jang, J

Cho, KS

Kim, CK

机构：

[1] Korea Adv Inst Sci & Technol, Div Elect Engn, Dept Elect Engn & Comp Sci, Taejon 305701, South Korea

[2] Kyung Hee Univ, Dept Phys, Seoul 130701, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2003年 / 24卷 / 09期

关键词：

active matrix; amorphous silicon; organic light-emitting diodes; thin-film transistors;

D O I：

10.1109/LED.2003.816590

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We propose a new pixel circuit using hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs), composed of three switching and one driving TFT, for active-matrix organic light-emitting diodes (AMOLEDs) with a voltage source method. The circuit simulation results based on the measured threshold voltage shift of a-Si:H TFTs by gate-bias stress indicate that this circuit compensates for the threshold voltage shifts over 10 000 h of operation.

引用

页码：583 / 585

页数：3

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