A new a-Si:H thin-film transistor pixel circuit for active-matrix organic light-emitting diodes

被引：70
|
作者：
Goh, JC [1 ]
Jang, J
Cho, KS
Kim, CK
机构：
[1] Korea Adv Inst Sci & Technol, Div Elect Engn, Dept Elect Engn & Comp Sci, Taejon 305701, South Korea
[2] Kyung Hee Univ, Dept Phys, Seoul 130701, South Korea
来源：
IEEE ELECTRON DEVICE LETTERS | 2003年 / 24卷 / 09期
关键词：
active matrix; amorphous silicon; organic light-emitting diodes; thin-film transistors;
D O I：
10.1109/LED.2003.816590
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We propose a new pixel circuit using hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs), composed of three switching and one driving TFT, for active-matrix organic light-emitting diodes (AMOLEDs) with a voltage source method. The circuit simulation results based on the measured threshold voltage shift of a-Si:H TFTs by gate-bias stress indicate that this circuit compensates for the threshold voltage shifts over 10 000 h of operation.
引用
收藏
页码：583 / 585
页数：3
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