High Performance MRAM with Spin-Transfer-Torque and Voltage-Controlled Magnetic Anisotropy Effects

被引：41

作者：

Cai, Hao ^{[1
,2
]}

Kang, Wang ^{[3
,4
]}

Wang, You ^{[2
]}

Naviner, Lirida Alves De Barros ^{[2
]}

Yang, Jun ^{[1
]}

Zhao, Weisheng ^{[3
,4
]}

机构：

[1] Southeast Univ, Natl ASIC Syst Engn Ctr, Nanjing 210096, Jiangsu, Peoples R China

[2] Univ Paris Saclay, Telecom ParisTech, Dept Commun & Elect, F-75013 Paris, France

[3] Beihang Univ, Fert Beijing Inst, Beijing Adv Innovat Ctr Big Data & Brain Comp, Beijing 100191, Peoples R China

[4] Beihang Univ, Sch Elect & Informat Engn, Beijing 100191, Peoples R China

来源：

APPLIED SCIENCES-BASEL | 2017年 / 7卷 / 09期

基金：

中国国家自然科学基金;

关键词：

STT-MRAM; VCMA-MRAM; ultra-low power; reliability; MAGNETORESISTANCE; CIRCUIT; POWER;

D O I：

10.3390/app7090929

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The Internet of Things (IoTs) relies on efficient node memories to process data among sensors, cloud and RF front-end. Both mainstream and emerging memories have been developed to achieve this energy efficiency target. Spin transfer torque magnetic tunnel junction (STT-MTJ)-based nonvolatile memory (NVM) has demonstrated great performance in terms of zero standby power, switching power efficiency, infinite endurance and high density. However, it still has a big performance gap; e.g., high dynamic write energy, large latency, yield and reliability. Recently, voltage-controlled magnetic anisotropy (VCMA) has been introduced to achieve improved energy-delay efficiency and robust non-volatile writing control with an electric field or a switching voltage. VCMA-MTJ-based MRAM could be a promising candidate in IoT node memory for high-performance, ultra-low power consumption targets.

引用

页数：13

共 49 条

[1]

[Anonymous], THESIS

[2] GIANT MAGNETORESISTANCE OF (001)FE/(001) CR MAGNETIC SUPERLATTICES [J].

BAIBICH, MN ;

BROTO, JM ;

FERT, A ;

VANDAU, FN ;

PETROFF, F ;

EITENNE, P ;

CREUZET, G ;

FRIEDERICH, A ;

CHAZELAS, J .

PHYSICAL REVIEW LETTERS, 1988, 61 (21) :2472-2475

[3] Emission of spin waves by a magnetic multilayer traversed by a current [J].

Berger, L .

PHYSICAL REVIEW B, 1996, 54 (13) :9353-9358

[4] ENHANCED MAGNETORESISTANCE IN LAYERED MAGNETIC-STRUCTURES WITH ANTIFERROMAGNETIC INTERLAYER EXCHANGE [J].

BINASCH, G ;

GRUNBERG, P ;

SAURENBACH, F ;

ZINN, W .

PHYSICAL REVIEW B, 1989, 39 (07) :4828-4830

[5]

Cai H., 2016, IEEE T MAG, P52

[6]

Cai H., P C GREAT LAK S VLSI, P23

[7]

Cai H., P IEEE COMP SOC ANN, P57

[8] Robust Ultra-Low Power Non-Volatile Logic-in-Memory Circuits in FD-SOI Technology [J].

Cai, Hao ;

Wang, You ;

De Barros, Lirida Alves ;

Zhao, Weisheng .

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 2017, 64 (04) :847-857

[9] Breakdown Analysis of Magnetic Flip-Flop With 28-nm UTBB FDSOI Technology [J].

Cai, Hao ;

Wang, You ;

Naviner, Lirida Alves de Barros ;

Zhao, Weisheng .

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2016, 16 (03) :376-383

[10] Multiplexing Sense-Amplifier-Based Magnetic Flip-Flop in a 28-nm FDSOI Technology [J].

Cai, Hao ;

Wang, You ;

Zhao, Weisheng ;

Naviner, Lirida Alves de Barros .

IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2015, 14 (04) :761-767

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