Possible method of reducing annealing temperatures of radiation defects in ion-implanted silicon carbide

被引：3

作者：

Dzhibuti, ZV ^{[1
]}

Dolidze, ND ^{[1
]}

Narsiya, GS ^{[1
]}

Eristavi, GL ^{[1
]}

机构：

[1] I Dzhavakhishvili State Univ, Tbilisi, Georgia

来源：

TECHNICAL PHYSICS LETTERS | 1997年 / 23卷 / 10期

关键词：

Radiation; Silicon; Carbide; Silicon Carbide; Radiation Energy;

D O I：

10.1134/1.1261786

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

It is shown that the temperatures of post-implantation annealing of radiation defects in silicon carbide may be reduced by pulsed photon treatment. With a correct choice of spectral composition and radiation energy, pulsed photon treatment is effective for annealing radiation defects through the selective absorption of photons at the corresponding levels. It is suggested that the annealing mechanism is ionizational (annealing under these experimental conditions cannot be explained by a thermal mechanism alone). (C) 1997 American Institute of Physics.

引用

页码：746 / 747

页数：2

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