Impact of leakage current in germanium channel based DMDG TFET using drain-gate underlap technique

In this work, a dual metal (DM) double-gate (DG) Tunnel Field Effect Transistor (DMDG-TFET) with drain gate underlap is proposed to overcome the challenges in conventional TFET. The ON-current (I-on), OFF current (I-off), I-on/I-off ratio, subthreshold swing (SS) and ambipolar current (I-ambi) of the proposed device with drain underlap are investigated as gate length is scaled (L-GATE) down. The proposed device gives a better suppression in leakage current and low ambipolar current. The suppressed leakage current (loft) and ambipolar current (I-ambi) are 9.49 x 10 14 A/pm and 1.95 x 10 12 A/pm respectively for a gate length (L-GATE) of 36 nm and a channel length (Lb) of 50 nm for a supply voltage of 0.5 V. Excellent switching behavior is achieved when gate length (L-GATE) is 72% of the channel length (L-ch). The proposed architecture is suitable for low power applications. (C) 2018 Elsevier GmbH. All rights reserved.