Ion-beam induced hydrogen redistribution in a-Si:H-based triple layer structures

被引：0

作者：

Pantchev, B. ^{[1
]}

Danesh, P. ^{[1
]}

Schmidt, B.

Grambole, D.

Bischoff, L.

机构：

[1] Bulgarian Acad Sci, Inst Solid State Phys, Sofia 1784, Bulgaria

来源：

16 ISCMP: PROGRESS IN SOLID STATE AND MOLECULAR ELECTRONICS, IONICS AND PHOTONICS | 2010年 / 253卷

关键词：

AMORPHOUS-SILICON; THIN-FILMS; H FILMS; IRRADIATION;

D O I：

10.1088/1742-6596/253/1/012055

中图分类号：

O64 [物理化学（理论化学）、化学物理学]; O56 [分子物理学、原子物理学];

学科分类号：

070203 ; 070304 ; 081704 ; 1406 ;

摘要：

Ion-beam induced hydrogen migration has been studied in triple layer structures, a-Si/a-Si:H/a-Si and SiO2/a-Si:H/SiO2. Nuclear reaction analysis has been used for simultaneous irradiation with MeV ions and measurement of hydrogen distribution in the structures. It has been established that there is no hydrogen loss from SiO2/a-Si:H/SiO2 structures, but an asymmetric redistribution due to hydrogen penetration into the bottom SiO2 layer. Hydrogen loss has been observed from the a-Si/a-Si:H/a-Si structures. The inspection of the surface of these samples by means of atomic force microscope has shown that it proceeds by bubble formation and blistering at the inner interface. The observed ion-beam induced selective penetration of hydrogen into the underlying material can be used as a tool for preparation of microcavity and microchannel arrays.

引用

页数：7

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