Single-crystalline ferroelectric thin films by ion implantation and direct wafer bonding

被引:22
作者
Szafraniak, I [1 ]
Radu, I [1 ]
Scholz, R [1 ]
Alexe, M [1 ]
Gösele, U [1 ]
机构
[1] Max Planck Inst Microstruct Phys, D-06120 Halle An Der Saale, Germany
关键词
layer transfer; ferroelectric thin film; ion implantation;
D O I
10.1080/10584580390259452
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Layer splitting by helium and/or hydrogen implantation and wafer bonding was applied to transfer thin single-crystalline ferroelectric layers onto different substrates. The optimum conditions for achieving blistering/splitting after post-implantation annealing were experimentally obtained for LiNbO3 , LaAlO3 , SrTiO3 single crystals and PLZT ceramic. Under certain implantation conditions large area exfoliation instead of blistering occurs after annealing of as-implanted substrates. Small area single-crystalline layer transfer was successfully achieved.
引用
收藏
页码:983 / 990
页数:8
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