Effect of fullerene doping on the electrical properties of P3HT/PCBM layers

被引：9

作者：

Aruna, P. ^{[1
]}

Suresh, K. ^{[2
]}

Joseph, C. M. ^{[1
]}

机构：

[1] Dayananda Sagar Coll Engn, Dept Phys, Bangalore 560078, Karnataka, India

[2] Shri Dharmasthala Manjunatheshwara Inst Technol, Ujire, India

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2015年 / 36卷

关键词：

Organic semiconductors; P3HT:PCBM; Thin films; C-60; Bi-stability; Organic memory; BISTABLE DEVICES; THIN-FILMS; POLYMER;

D O I：

10.1016/j.mssp.2015.03.019

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Poly (3-hexylthiophene-2, 5-diyl) (P3HT) and its blend with Phenyl-C-61-Butyric acid-Methyl-Ester (PCBM) and fullerene (C-60) thin films were prepared and their electrical properties for memory applications were studied. Due to doping, a sharp decrease in the resistance for a P3HT:PCBM:C-60 device was observed at around 70 degrees C which makes it useful for thermal switching applications. Addition of C-60 to P3HT:PCBM blend gave a high value for R-RESET/R-SET in thermal switching. For bias switching, threshold voltage reduces to 1.4 V from 25 V with the addition of C-60 to P3HT layer. (c) 2015 Elsevier Ltd. All rights reserved.

引用

页码：7 / 12

页数：6

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