Effect of fullerene doping on the electrical properties of P3HT/PCBM layers

被引：9

作者：

Aruna, P. ^{[1
]}

Suresh, K. ^{[2
]}

Joseph, C. M. ^{[1
]}

机构：

[1] Dayananda Sagar Coll Engn, Dept Phys, Bangalore 560078, Karnataka, India

[2] Shri Dharmasthala Manjunatheshwara Inst Technol, Ujire, India

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2015年 / 36卷

关键词：

Organic semiconductors; P3HT:PCBM; Thin films; C-60; Bi-stability; Organic memory; BISTABLE DEVICES; THIN-FILMS; POLYMER;

D O I：

10.1016/j.mssp.2015.03.019

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Poly (3-hexylthiophene-2, 5-diyl) (P3HT) and its blend with Phenyl-C-61-Butyric acid-Methyl-Ester (PCBM) and fullerene (C-60) thin films were prepared and their electrical properties for memory applications were studied. Due to doping, a sharp decrease in the resistance for a P3HT:PCBM:C-60 device was observed at around 70 degrees C which makes it useful for thermal switching applications. Addition of C-60 to P3HT:PCBM blend gave a high value for R-RESET/R-SET in thermal switching. For bias switching, threshold voltage reduces to 1.4 V from 25 V with the addition of C-60 to P3HT layer. (c) 2015 Elsevier Ltd. All rights reserved.

引用

页码：7 / 12

页数：6

共 33 条

[1] Switching and memory effects in partly crystallized amorphous Ge2Sb2Te5 films in a current controlled mode [J].

Almasov, Nurlan ;

Bogoslovskiy, Nikita ;

Korobova, Nataly ;

Kozyukhin, Sergey ;

Fefelov, Sergey ;

Kazakova, Lyudmila ;

Jakovlev, Sergey ;

Tsendin, Konstantin ;

Guseinov, Nazim .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 2012, 358 (23) :3299-3303

[2] Simultaneous use of small- and wide-angle X-ray techniques to analyze nanometerscale phase separation in polymer heterojunction solar cells [J].

Chiu, Mao-Yuan ;

Jeng, U-Ser ;

Su, Chiu-Hun ;

Liang, Keng S. ;

Wei, Kung-Hwa .

ADVANCED MATERIALS, 2008, 20 (13) :2573-+

[3] Organic donor-acceptor system exhibiting electrical bistability for use in memory devices [J].

Chu, CW ;

Ouyang, J ;

Tseng, HH ;

Yang, Y .

ADVANCED MATERIALS, 2005, 17 (11) :1440-+

[4] Structural and electrical properties of P3HT:PCBM/PEDOT:PSS thin films deposited through electrohydrodynamic atomization technique [J].

Duraisamy, Navaneethan ;

Muhammad, Nauman Malik ;

Hyun, Myung-Taek ;

Choi, Kyung-Hyun .

MATERIALS LETTERS, 2013, 92 :227-230

[5] Conductance quantization in a Ag filament-based polymer resistive memory [J].

Gao, Shuang ;

Zeng, Fei ;

Chen, Chao ;

Tang, Guangsheng ;

Lin, Yisong ;

Zheng, Zifeng ;

Song, Cheng ;

Pan, Feng .

NANOTECHNOLOGY, 2013, 24 (33)

[6] On the stability of the electrical and photoelectrical properties of P3HT and P3HT:PCBM blends thin films [J].

Girtan, Mihaela .

ORGANIC ELECTRONICS, 2013, 14 (01) :200-205

[7] Nanostructured polyaniline sensors [J].

Huang, J ;

Virji, S ;

Weiller, BH ;

Kaner, RB .

CHEMISTRY-A EUROPEAN JOURNAL, 2004, 10 (06) :1314-1319

[8]

Kalonga G., 2013, Journal of Chemical Engineering and Materials Science, V4, P93, DOI [10.5897/JCEMS2013.0148, DOI 10.5897/JCEMS2013.0148]

[9]

Kanwal A., 2004, MATER RES SOC S P, V830

[10] Diffusion processes for doping of C60 (fullerene) thin films [J].

Katz, EA ;

Faiman, D ;

Tuladhar, SM ;

Shtutina, S ;

Froumin, N ;

Polak, M ;

Strzhemechny, Y .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2003, 75 (3-4) :421-426

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