Compact Wideband Equivalent-Circuit Model for Electrical Modeling of Through-Silicon Via

被引:64
作者
Liu, En-Xiao [1 ]
Li, Er-Ping [1 ]
Ewe, Wei-Bin [1 ]
Lee, Hui Min [1 ]
Lim, Teck Guan [2 ]
Gao, Shan [2 ]
机构
[1] ASTAR, Inst High Performance Comp, Elect & Photon Dept, RF Engn Grp, Singapore, Singapore
[2] ASTAR, Microsyst Modules & Components MMC Lab, Inst Microelect, Singapore, Singapore
关键词
Compact wideband equivalent-circuit model; Fourier-Bessel expansion; 3-D integrated circuits (ICs) and packaging; through-silicon via (TSV);
D O I
10.1109/TMTT.2011.2116039
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents a compact wideband equivalent-circuit model for electrical modeling of through-silicon vias (TSVs) in 3-D stacked integrated circuits and packaging. Rigorous closed-form formulas for the resistance and inductance of TSVs are derived from the magneto-quasi-static theory with a Fourier-Bessel expansion approach, whereas analytical formulas from static solutions are used to compute the capacitance and conductance. The equivalent-circuit model can capture the important parasitic effects of TSVs, including the skin effect, proximity effect, lossy effect of silicon, and semiconductor effect. Therefore, it yields accurate results comparable to those with 3-D full-wave solvers.
引用
收藏
页码:1454 / 1460
页数:7
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