Experimental observations of bistable characteristics of an optically injected semiconductor laser biased nearby the threshold current

被引：0
|
作者：
Lin, Xiao-Dong [1 ]
Wu, Zheng-Mao [1 ]
Wang, Li [1 ]
Ping, Xin-Xin [1 ]
Xia, Guang-Qiong [1 ]
机构：
[1] Southwest Univ, Sch Phys, Chongqing 400715, Peoples R China
来源：
SEMICONDUCTOR LASERS AND APPLICATIONS IV | 2010年 / 7844卷
关键词：
Semiconductor laser; Optical injection; State-bistability; Power-bistability; OPTOELECTRONIC FEEDBACK; LIGHT INJECTION; SUBJECT; BISTABILITY; LOCKING; SYNCHRONIZATION; DYNAMICS; DIODE; ROUTE; CHAOS;
D O I：
10.1117/12.869968
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, a new style state-bistability has been experimentally observed by back and forth sweeping the current of a semiconductor laser nearby its threshold. Moreover, the influence of the injection power on the width of state-bistability loop has been analyzed and discussed in detail.
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收藏
页数：6
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