Kinetics of photoluminescence of porous silicon studied by photo-luminescence excitation spectroscopy and time-resolved spectroscopy

被引：0

作者：

Lukasiak, Z ^{[1
]}

Dalasinski, P ^{[1
]}

Bala, W ^{[1
]}

机构：

[1] Nicholas Copernicus Univ, Fac Phys Astron & Informat, PL-87100 Torun, Poland

来源：

OPTO-ELECTRONICS REVIEW | 2003年 / 11卷 / 02期

关键词：

porous silicon; photoluminescence; decay times; time resolved spectra; excitation spectra;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Photoluminescence (PL) spectra and excitation spectra (PLE) (under steady-state conditions), time resolved spectra (PL-TRS) and decay curves of photoluminescence (PL-DC) in micro- and nanosecond range (under pulsed operation) at different temperatures (10 K-room) on anodically etched boron - doped silicon are presented. PLE shows that visible PL is excited by light from UV region. PL and PL-TRS exhibit multiband structure and can be decomposed as a sun? of few Gaussians. PL-DCs have multiexponential shape. Relaxation times depend on wavelength of the observation. To explain our results we assumed a model in which the multibarrier structure is formed by larger Si crystallites or wires (quantum well) surrounded by Si crystallites with diameters in the nanometer range (barrier region). The visible photoluminescence originates from radiative recombination between discrete energy levels in a quantum well.

引用

页码：113 / 117

页数：5

共 16 条

[1] PHOTOLUMINESCENCE, REFLECTIVITY AND RAMAN INVESTIGATIONS OF NANOCRYSTALLITES IN LUMINESCENT POROUS SILICON [J].

BALA, W ;

GLOWACKI, G ;

LUKASIAK, Z ;

DROZDOWSKI, M ;

KOZIELSKI, M ;

NOSSARZEWSKAORLOWSKA, E ;

BRZOZOWSKI, A .

ACTA PHYSICA POLONICA A, 1995, 87 (02) :445-448

[2] Observation of a magic discrete family of ultrabright Si nanoparticles [J].

Belomoin, G ;

Therrien, J ;

Smith, A ;

Rao, S ;

Twesten, R ;

Chaieb, S ;

Nayfeh, MH ;

Wagner, L ;

Mitas, L .

APPLIED PHYSICS LETTERS, 2002, 80 (05) :841-843

[3] Photoluminescence and recombination mechanisms in GaN/Al0.2Ga0.8N superlattice [J].

Bergman, L ;

Dutta, M ;

Stroscio, MA ;

Komirenko, SM ;

Nemanich, RJ ;

Eiting, CJ ;

Lambert, DJH ;

Kwon, HK ;

Dupuis, RD .

APPLIED PHYSICS LETTERS, 2000, 76 (15) :1969-1971

[4]

Bevington P.R., 1969, DATA REDUCTION ERROR

[5] Porous silicon: a quantum sponge structure for silicon based optoelectronics [J].

Bisi, O ;

Ossicini, S ;

Pavesi, L .

SURFACE SCIENCE REPORTS, 2000, 38 (1-3) :1-126

[6] SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].

CANHAM, LT .

APPLIED PHYSICS LETTERS, 1990, 57 (10) :1046-1048

[7] SUPERLATTICE AND NEGATIVE DIFFERENTIAL CONDUCTIVITY IN SEMICONDUCTORS [J].

ESAKI, L ;

TSU, R .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (01) :61-&

[8]

Lukasiak Z., 2000, Electron Technology, V33, P207

[9] Photoluminescence of porous silicon under pulsed excitation [J].

Lukasiak, Z ;

Murawski, M ;

Bala, W .

INTERNATIONAL CONFERENCE ON SOLID STATE CRYSTALS 2000: EPILAYERS AND HETEROSTRUCTURES IN OPTOELECTRONICS AND SEMICONDUCTOR TECHNOLOGY, 2001, 4413 :157-162

[10] AN ALGORITHM FOR LEAST-SQUARES ESTIMATION OF NONLINEAR PARAMETERS [J].

MARQUARDT, DW .

JOURNAL OF THE SOCIETY FOR INDUSTRIAL AND APPLIED MATHEMATICS, 1963, 11 (02) :431-441

← 1 2 →