Variety of ZnO nanostructured materials prepared by PECVD

被引:5
|
作者
Mochalov, Leonid [1 ,2 ]
Logunov, Alexander [1 ]
Prokhorov, Igor [1 ]
Vshivtsev, Maksim [1 ]
Kudryashov, Mikhail [1 ]
Kudryashova, Yulia [1 ]
Malyshev, Vladimir [1 ]
Spivak, Yulia [3 ]
Greshnyakov, Evgeny [4 ]
Knyazev, Alexander [1 ]
Fukina, Diana [1 ]
Yunin, Pavel [1 ]
Moshnikov, Vyacheslav [3 ]
机构
[1] Lobachevsky Univ, 23 Gagarin Av, Nizhnii Novgorod 606950, Russia
[2] Univ North Carolina Charlotte, 9201 Univ City Blvd, Charlotte, NC 28223 USA
[3] St Petersburg Electrotech Univ LETI, Prof Popov Str 5, St Petersburg 197376, Russia
[4] Ural Fed Univ, Mira St 19, Ekaterinburg 620002, Russia
关键词
Zinc oxide; Nanostructures; PECVD; ZINC-OXIDE; THIN-FILMS; PLASMA; PHOTOLUMINESCENCE; NANOPARTICLES; FABRICATION; NANOWIRES; SILICON; GROWTH; RAMAN;
D O I
10.1007/s11082-022-03979-z
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Zinc oxide nanostructures of different composition and morphology have been prepared by the plasma-enhanced chemical vapor deposition technique (PECVD). Highly pure elemental zinc was used as the precursor. RF (40 MHz) inductively-coupled plasma discharge was implemented for initiation of the plasma-chemical reactions in the gas phase. Hydrogen-oxygen (H-2-O-2) gas composition of various ratios (1:2, 1:1, and 2:1) was employed as the plasma feed gas mixture. Hydrogen also served as the carrier gas. Optical emission spectroscopy was utilized to identify the intermediate reactive species and assume the possible mechanism of the plasma process. The effect of the power produced by the plasma discharge, as well as the heating of the zinc precursor, on the stoichiometry and structure of thin films was investigated. The obtained material properties were described by different analytical techniques.
引用
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页数:17
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