Thermal Conductivity of Silicon Thin Films Predicted by Molecular Dynamics Simulations and Theoretical Calculation

被引：3
|
作者：
Zhang, Xingli [1 ]
Sun, Zhaowei [1 ]
机构：
[1] Harbin Inst Technol Res Ctr Satellite Technol, Harbin, Peoples R China
来源：
RECENT TRENDS IN MATERIALS AND MECHANICAL ENGINEERING MATERIALS, MECHATRONICS AND AUTOMATION, PTS 1-3 | 2011年 / 55-57卷
关键词：
silicon thin films; thermal conductivity; molecular dynamics simulations;
D O I：
10.4028/www.scientific.net/AMM.55-57.1152
中图分类号：
TH [机械、仪表工业];
学科分类号：
0802 ;
摘要：
Molecular, dynamics simulation and the Boltzmann transport equation are used respectively to analyze the phonon transport in Si thin film. The MD result is in good agreement with the theoretical analysis values. The results show that the calculated thermal conductivity decreases almost linearly as the film thickness reduced and is almost independent of the temperature at the nanoscale. It was observed from the simulation results that there exists the obvious size effect on the thermal conductivity.
引用
收藏
页码：1152 / 1155
页数：4
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