Tunable Electronic Properties of MoS2/SiC Heterostructures: A First-Principles Study

被引:3
作者
Liu, Shu [1 ]
Li, Xiaodan [1 ]
Meng, Dongping [1 ]
Li, Shenghao [1 ]
Chen, Xiong [1 ]
Hu, Taotao [2 ]
机构
[1] Univ Shanghai Sci & Technol, Coll Sci, Shanghai 200093, Peoples R China
[2] Northeast Normal Univ, Sch Phys, Changchun 130024, Peoples R China
关键词
Tunable electronic properties; heterostructure; first principles; type-II heterojunctions; TOTAL-ENERGY CALCULATIONS; OPTICAL-ABSORPTION; 2D SEMICONDUCTOR; CHARGE-TRANSFER; BAND-GAP; MONOLAYER; PHOSPHORENE; TRANSITION; EFFICIENCY; MOSE2;
D O I
10.1007/s11664-022-09613-8
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Using first-principle calculations based on density functional theory, we have systematically investigated the structural and electronic properties of hybrid systems composed of monolayer MoS2 and SiC. The systems include a MoS2/SiC superlattice, MoS2-SiC hetero-bilayer, and a hetero-trilayer. Among all the superlattices and hetero-bilayers considered, the AA-2 type (Mo atoms are aligned on top of C atoms, S atoms are aligned on top of Si atoms) with type-II band alignment is the most stable model. Strain-induced tunable bandgaps were found in MoS2/SiC hetero-bilayer systems. In addition, the tunable bandgap could also be realized by constructing a hetero-trilayer structure. The tunable band structures make MoS2/SiC hybrid systems promising candidates for future optoelectronic devices.
引用
收藏
页码:3714 / 3726
页数:13
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