Extraction of the contact resistance from the saturation region of rubrene single-crystal transistors

被引：19
作者：
Imakawa, Masaki [1 ]
Sawabe, Kosuke [2 ]
Yomogida, Yohei [2 ]
Iwasa, Yoshihiro [3 ,4 ]
Takenobu, Taishi [1 ,5 ]
机构：
[1] Waseda Univ, Sch Adv Sci & Engn, Dept Appl Phys, Tokyo 1698555, Japan
[2] Tohoku Univ, Grad Sch Sci, Dept Phys, Sendai, Miyagi 9808578, Japan
[3] Univ Tokyo, Sch Engn, Quantum Phase Elect Ctr, Tokyo 1138656, Japan
[4] Japan Sci & Technol Agcy JST, CREST, Kawaguchi, Saitama 3320012, Japan
[5] Japan Sci & Technol Agcy JST, PRESTO, Kawaguchi, Saitama 3320012, Japan
来源：
APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 23期
关键词：
FIELD-EFFECT TRANSISTORS; MOBILITY; ELECTRODES;
D O I：
10.1063/1.3666236
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A modified transmission-line method (TLM) is proposed to extract the contact resistance from the transistor saturation region. The conventional TLM requires a linear current-voltage characteristic, and this requirement strongly limits its application. In this study, we focused on the pinch-off point of the output characteristics and analyzed the contact resistance using nonlinear output curves. We applied the modified TLM to both p-and n-type rubrene single-crystal transistors and compared the mobility differences in terms of both the intrinsic bandwidth and the extrinsic carrier trap density. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3666236]
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页数：3
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共 21 条
  • [1] Electron transport in rubrene single-crystal transistors
    Bisri, Satria Zulkarnaen
    Takenobu, Taishi
    Takahashi, Tetsuo
    Iwasa, Yoshihiro
    [J]. APPLIED PHYSICS LETTERS, 2010, 96 (18)
  • [2] High Mobility and Luminescent Efficiency in Organic Single-Crystal Light-Emitting Transistors
    Bisri, Satria Zulkarnaen
    Takenobu, Taishi
    Yomogida, Yohei
    Shimotani, Hidekazu
    Yamao, Takeshi
    Hotta, Shu
    Iwasa, Yoshihiro
    [J]. ADVANCED FUNCTIONAL MATERIALS, 2009, 19 (11) : 1728 - 1735
  • [3] General observation of n-type field-effect behaviour in organic semiconductors
    Chua, LL
    Zaumseil, J
    Chang, JF
    Ou, ECW
    Ho, PKH
    Sirringhaus, H
    Friend, RH
    [J]. NATURE, 2005, 434 (7030) : 194 - 199
  • [4] Transport properties in the rubrene crystal:: Electronic coupling and vibrational reorganization energy
    da Silva, DA
    Kim, EG
    Brédas, JL
    [J]. ADVANCED MATERIALS, 2005, 17 (08) : 1072 - +
  • [5] Organic single-crystal field-effect transistors
    de Boer, RWI
    Gershenson, ME
    Morpurgo, AF
    Podzorov, V
    [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2004, 201 (06): : 1302 - 1331
  • [6] Electroluminescence in conjugated polymers
    Friend, RH
    Gymer, RW
    Holmes, AB
    Burroughes, JH
    Marks, RN
    Taliani, C
    Bradley, DDC
    Dos Santos, DA
    Brédas, JL
    Lögdlund, M
    Salaneck, WR
    [J]. NATURE, 1999, 397 (6715) : 121 - 128
  • [7] Hole mobility in organic single crystals measured by a "flip-crystal" field-effect technique
    Goldmann, C
    Haas, S
    Krellner, C
    Pernstich, KP
    Gundlach, DJ
    Batlogg, B
    [J]. JOURNAL OF APPLIED PHYSICS, 2004, 96 (04) : 2080 - 2086
  • [8] Reproducible low contact resistance in rubrene single-crystal field-effect transistors with nickel electrodes
    Hulea, IN
    Russo, S
    Molinari, A
    Morpurgo, AF
    [J]. APPLIED PHYSICS LETTERS, 2006, 88 (11)
  • [9] Reducing the contact resistance of bottom-contact pentacene thin-film transistors by employing a MoOx carrier injection layer
    Kumaki, Daisuke
    Umeda, Tokiyoshi
    Tokito, Shizuo
    [J]. APPLIED PHYSICS LETTERS, 2008, 92 (01)
  • [10] Spatial extent of wave functions of gate-induced hole carriers in pentacene field-effect devices as investigated by electron spin resonance
    Marumoto, Kazuhiro
    Kuroda, Shin-ichi
    Takenobu, Taishi
    Iwasa, Yoshihiro
    [J]. PHYSICAL REVIEW LETTERS, 2006, 97 (25)
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