35-GHz modulation bandwidth in injection-locked semiconductor lasers

被引：0

作者：

Hwang, SK

Liu, JM

White, JK

机构：

来源：

2003 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2 | 2003年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：710 / 711

页数：2

相关论文

共 4 条

[1] Experimental demonstration of modulation bandwidth enhancement in distributed feedback lasers with external light injection
Meng, XJ
Chau, T
Wu, MC
[J]. ELECTRONICS LETTERS, 1998, 34 (21) : 2031 - 2032
[2] FREQUENCY-RESPONSE OF 1.3-MU-M INGAASP HIGH-SPEED SEMICONDUCTOR-LASERS
OLSHANSKY, R
HILL, P
LANZISERA, V
POWAZINIK, W
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1987, 23 (09) : 1410 - 1418
[3] Small-signal analysis of modulation characteristics in a semiconductor laser subject to strong optical injection
Simpson, TB
Liu, JM
Gavreilides, A
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1996, 32 (08) : 1456 - 1468
[4] Enhanced modulation bandwidth in injection-locked semiconductor lasers
Simpson, TB
Liu, JM
[J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 1997, 9 (10) : 1322 - 1324