Improvement in the leakage current characteristic of metal-insulator-metal capacitor by adopting RuO2 film as bottom electrode

被引：73

作者：

Han, Jeong Hwan ^{[1
,2
]}

Han, Sora ^{[1
,2
]}

Lee, Woongkyu ^{[1
,2
]}

Lee, Sang Woon ^{[1
,2
]}

Kim, Seong Keun ^{[1
,2
]}

Gatineau, Julien ^{[3
]}

Dussarrat, Christian ^{[3
]}

Hwang, Cheol Seong ^{[1
,2
]}

机构：

[1] Seoul Natl Univ, WCU Hybrid Mat Program, Dept Mat Sci & Engn, Seoul 151744, South Korea

[2] Seoul Natl Univ, Interuniv Semicond Res Ctr, Seoul 151744, South Korea

[3] Air Liquide, Tsukuba, Ibaraki, Japan

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 02期

基金：

新加坡国家研究基金会;

关键词：

CHEMICAL-VAPOR-DEPOSITION; ATOMIC-LAYER DEPOSITION; DOPED TIO2 FILMS; THIN-FILMS; GROWTH; PRECURSOR; OXIDE;

D O I：

10.1063/1.3609875

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The dielectric constant, equivalent oxide thickness (t(ox)), and leakage current properties of Pt/(Al-doped) TiO2/RuO2 capacitors were examined in comparison with Pt/(Al-doped) TiO2/Ru capacitors. The Al-doped TiO2 and undoped TiO2 films grown on RuO2 showed high dielectric constants of 60 and 102, respectively. The minimum tox of these films were 0.46 nm and 0.56 nm, respectively, while still satisfying the dynamic random access memory leakage current density specification (< 1 x 10(-7) Acm(-2) at capacitor voltage of 0.8 V). These excellent electrical properties of (Al-doped) TiO2 on RuO2 were attributed to the high work function and the reduced interfacial effect on RuO2. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3609875]

引用

页数：3

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