An introduction to deep submicron CMOS for vertex applications

被引：20

作者：

Campbell, M ^{[1
]}

Anelli, G ^{[1
]}

Cantatore, E ^{[1
]}

Faccio, F ^{[1
]}

Heijne, EHM ^{[1
]}

Jarron, P ^{[1
]}

Santiard, JC ^{[1
]}

Snoeys, W ^{[1
]}

Wyllie, K ^{[1
]}

机构：

[1] CERN, Div EP, CH-1211 Geneva 23, Switzerland

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2001年 / 473卷 / 1-2期

关键词：

CMOS; readout electronics; vertex detectors;

D O I：

10.1016/S0168-9002(01)01135-4

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Microelectronics has become a key enabling technology in the development of tracking detectors for High Energy Physics. Deep submicron CMOS is likely to be extensively used in all future tracking systems. Radiation tolerance in the Mrad region has been achieved and complete readout chips comprising many millions of transistors now exist. The choice of technology is dictated by market forces but the adoption of deep submicron CMOS for tracking applications still poses some challenges. The techniques used are reviewed and some of the future challenges are discussed. (C) 2001 Published by Elsevier Science B.V.

引用

页码：140 / 145

页数：6

共 50 条

[21] Sensing design issues in deep submicron CMOS SRAMs
Natarajan, A
Shankar, V
Maheshwari, A
Burleson, W
IEEE COMPUTER SOCIETY ANNUAL SYMPOSIUM ON VLSI, PROCEEDINGS: NEW FRONTIERS IN VLSI DESIGN, 2005, : 42 - 45
[22] Submicron CMOS isolation technique using deep trenches
1600, Electrochemical Soc Inc, Manchester, NH, USA (89):
[23] Radiation hardening of ASICs in deep submicron CMOS technologies
Szczygiel, R
PHOTONICS APPLICATIONS IN ASTRONOMY, COMMUNICATIONS, INDUSTRY, AND HIGH-ENERGY PHYSICS EXPERIMENTS III, 2005, 5775 : 103 - 110
[24] IDDQ defect detection in deep submicron CMOS ICs
Kundu, S
SEVENTH ASIAN TEST SYMPOSIUM (ATS'98), PROCEEDINGS, 1998, : 150 - 152
[25] Deep submicron CMOS current IC testing: Is there a future?
Hawkins, CF
Soden, JM
IEEE DESIGN & TEST OF COMPUTERS, 1999, 16 (04): : 14 - 15
[26] Analog circuits in ultra-deep-submicron CMOS
Annema, AJ
Nauta, B
van Langevelde, R
Tuinhout, H
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2005, 40 (01) : 132 - 143
[27] CMOS-process technology deepens deep submicron
Lipman, J
EDN, 1997, 42 (05) : 16 - 16
[28] Characterization and modeling of parasitic emission in deep submicron CMOS
Vrignon, B
Bendhia, SD
Lamoureux, E
Sicard, E
IEEE TRANSACTIONS ON ELECTROMAGNETIC COMPATIBILITY, 2005, 47 (02) : 382 - 387
[29] Deep submicron CMOS based on silicon germanium technology
ONeill, AG
Antoniadis, DA
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1996, 43 (06) : 911 - 918
[30] Modeling and characterization of ultra deep submicron CMOS devices
Arora, ND
IEICE TRANSACTIONS ON ELECTRONICS, 1999, E82C (06): : 967 - 975

← 1 2 3 4 5 →