An introduction to deep submicron CMOS for vertex applications

被引：20

作者：

Campbell, M ^{[1
]}

Anelli, G ^{[1
]}

Cantatore, E ^{[1
]}

Faccio, F ^{[1
]}

Heijne, EHM ^{[1
]}

Jarron, P ^{[1
]}

Santiard, JC ^{[1
]}

Snoeys, W ^{[1
]}

Wyllie, K ^{[1
]}

机构：

[1] CERN, Div EP, CH-1211 Geneva 23, Switzerland

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2001年 / 473卷 / 1-2期

关键词：

CMOS; readout electronics; vertex detectors;

D O I：

10.1016/S0168-9002(01)01135-4

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Microelectronics has become a key enabling technology in the development of tracking detectors for High Energy Physics. Deep submicron CMOS is likely to be extensively used in all future tracking systems. Radiation tolerance in the Mrad region has been achieved and complete readout chips comprising many millions of transistors now exist. The choice of technology is dictated by market forces but the adoption of deep submicron CMOS for tracking applications still poses some challenges. The techniques used are reviewed and some of the future challenges are discussed. (C) 2001 Published by Elsevier Science B.V.

引用

页码：140 / 145

页数：6

共 50 条

[1] Deep submicron CMOS for millimeter wave power applications
Ferndahl, Mattias
Nemati, Hossein
Parvais, Bertrand
Zirath, Herbert
Decoutere, Stefaan
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2008, 18 (05) : 329 - 331
[2] SoC integration in deep submicron CMOS
Rickert, P
Haroun, B
IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST, 2004, : 653 - 656
[3] Physics of deep submicron CMOS VLSI
Buss, DD
Physics of Semiconductors, Pts A and B, 2005, 772 : 1591 - 1594
[4] 1/f noise in deep submicron CMOS technology for RF and analogue applications
Mercha, A
Simoen, E
Decoutere, S
Claeys, C
NOISE IN DEVICES AND CIRCUITS II, 2004, 5470 : 193 - 207
[5] High voltage tolerant ESD design for analog applications in deep submicron CMOS technologies
Chen, CH
Fang, YK
Tsai, CC
Tu, S
Chen, MKL
Chang, MC
PROCEEDINGS OF THE IEEE 2002 CUSTOM INTEGRATED CIRCUITS CONFERENCE, 2002, : 89 - 92
[6] (INVITED) deep-submicron digital CMOS potentialities for millimeter-wave applications
Cathelin, Andreia
Martineau, Baudouin
Seller, Nicolas
Gianesello, Frederic
Raynaud, Christine
Belot, Didier
2008 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM, VOLS 1 AND 2, 2008, : 43 - 46
[7] An Evaluation of CMOS Adders in Deep Submicron Processes
Gera, Rahul J.
Hoe, David H. K.
2012 44TH SOUTHEASTERN SYMPOSIUM ON SYSTEM THEORY (SSST), 2012, : 126 - 129
[8] Experimental studies on deep submicron CMOS scaling
Chen, K
Hu, C
Fang, P
Gupta, A
Lin, MR
Wollesen, DL
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1998, 13 (07) : 816 - 820
[9] Experimental studies on deep submicron CMOS scaling
IBM Corp, Fishkill, United States
Semicond Sci Technol, 7 (816-820):
[10] Analysis of harmonic distortion in deep submicron CMOS
Bucher, M
Bazigos, A
Nastos, N
Papananos, Y
Krummenacher, F
Yoshitomi, S
ICECS 2004: 11TH IEEE INTERNATIONAL CONFERENCE ON ELECTRONICS, CIRCUITS AND SYSTEMS, 2004, : 395 - 398

← 1 2 3 4 5 →