Effect of atomic layer deposition temperature on current conduction in Al2O3 films formed using H2O oxidant

被引:26
|
作者
Hiraiwa, Atsushi [1 ]
Matsumura, Daisuke [2 ]
Kawarada, Hiroshi [1 ,2 ,3 ]
机构
[1] Waseda Univ, Res Org Nano & Life Innovat, Shinjuku Ku, 513 Waseda Tsurumaki, Tokyo 1620041, Japan
[2] Waseda Univ, Fac Sci & Engn, Shinjuku Ku, 3-4-1 Okubo, Tokyo 1698555, Japan
[3] Waseda Univ, Kagami Mem Lab Mat Sci & Technol, Shinjuku Ku, 2-8-26 Nishiwaseda, Tokyo 1690051, Japan
关键词
BAND OFFSETS; THIN-FILMS; ELECTRON; EMISSION; SEMICONDUCTORS; SURFACE; OXIDES; GAP;
D O I
10.1063/1.4961520
中图分类号
O59 [应用物理学];
学科分类号
摘要
To develop high-performance, high-reliability gate insulation and surface passivation technologies for wide-bandgap semiconductor devices, the effect of atomic layer deposition (ALD) temperature on current conduction in Al2O3 films is investigated based on the recently proposed space-charge-controlled field emission model. Leakage current measurement shows that Al2O3 metal-insulator-semiconductor capacitors formed on the Si substrates underperform thermally grown SiO2 capacitors at the same average field. However, using equivalent oxide field as a more practical measure, the Al2O3 capacitors are found to outperform the SiO2 capacitors in the cases where the capacitors are negatively biased and the gate material is adequately selected to reduce virtual dipoles at the gate/Al2O3 interface. The Al2O3 electron affinity increases with the increasing ALD temperature, but the gate-side virtual dipoles are not affected. Therefore, the leakage current of negatively biased Al2O3 capacitors is approximately independent of the ALD temperature because of the compensation of the opposite effects of increased electron affinity and permittivity in Al2O3. By contrast, the substrate-side sheet of charge increases with increasing ALD temperature above 210 degrees C and hence enhances the current of positively biased Al2O3 capacitors more significantly at high temperatures. Additionally, an anomalous oscillatory shift of the current-voltage characteristics with ALD temperature was observed in positively biased capacitors formed by low-temperature (<= 210 degrees C) ALD. This shift is caused by dipoles at the Al2O3/underlying SiO2 interface. Although they have a minimal positive-bias leakage current, the low-temperature-grown Al2O3 films cause the so-called blisters problem when heated above 400 degrees C. Therefore, because of the absence of blistering, a 450 degrees C ALD process is presently the most promising technology for growing high-reliability Al2O3 films. Published by AIP Publishing.
引用
收藏
页数:10
相关论文
共 50 条
  • [1] Post-deposition-annealing effect on current conduction in Al2O3 films formed by atomic layer deposition with H2O oxidant
    Hiraiwa, Atsushi
    Matsumura, Daisuke
    Okubo, Satoshi
    Kawarada, Hiroshi
    JOURNAL OF APPLIED PHYSICS, 2017, 121 (07)
  • [2] Thermal atomic layer deposition of Ga2O3 films using trimethylgallium and H2O
    Hou, Chufeng
    Liang, Kai
    Yang, Ziyu
    Wang, Qiang
    Zhang, Yuefei
    Chen, Fei
    JOURNAL OF CRYSTAL GROWTH, 2025, 650
  • [3] Role of a cyclopentadienyl ligand in Hf precursors using H2O or O3 as oxidant in atomic layer deposition
    Song, Youngmin
    Kim, Hui-Jin
    Lee, Soo Hyun
    Kwon, Sujin
    Shong, Bonggeun
    Oh, Il-Kwon
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2025, 43 (02):
  • [4] Atomic layer deposition of HfO2 thin films using H2O2 as oxidant
    Choi, Min-Jung
    Park, Hyung-Ho
    Jeong, Doo Seok
    Kim, Jeong Hwan
    Kim, Jin-Sang
    Kim, Seong Keun
    APPLIED SURFACE SCIENCE, 2014, 301 : 451 - 455
  • [5] Molecular oxidation of surface -CH3 during atomic layer deposition of Al2O3 with H2O, H2O2, and O3 : A theoretical study
    Seo, Seunggi
    Nam, Taewook
    Lee, Han-Bo-Ram
    Kim, Hyungjun
    Shong, Bonggeun
    APPLIED SURFACE SCIENCE, 2018, 457 : 376 - 380
  • [6] Atomic layer deposition of Al2O3 process emissions
    Ma, Lulu
    Pan, Dongqing
    Xie, Yuanyuan
    Yuan, Chris
    RSC ADVANCES, 2015, 5 (17) : 12824 - 12829
  • [7] Atomic Layer Deposition of W:Al2O3 Nanocomposite Films with Tunable Resistivity
    Mane, Anil U.
    Elam, Jeffrey W.
    CHEMICAL VAPOR DEPOSITION, 2013, 19 (4-6) : 186 - 193
  • [8] Atomic Layer Deposition of Boron-Doped Al2O3 Dielectric Films
    Li, Xinzhi
    Vehkamaki, Marko
    Chundak, Mykhailo
    Mizohata, Kenichiro
    Vihervaara, Anton
    Leskela, Markku
    Putkonen, Matti
    Ritala, Mikko
    ADVANCED MATERIALS INTERFACES, 2023, 10 (18)
  • [9] Electroplating to visualize defects in Al2O3 thin films grown using atomic layer deposition
    Zhang, Yadong
    Bertrand, Jacob A.
    Yang, Ronggui
    George, Steven M.
    Lee, Y. C.
    THIN SOLID FILMS, 2009, 517 (11) : 3269 - 3272
  • [10] Angular behavior of the Berreman effect investigated in uniform Al2O3 layers formed by atomic layer deposition
    Scarel, Giovanna
    Na, Jeong-Seok
    Parsons, Gregory N.
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2010, 22 (15)