An Ultrahigh-Performance Photodetector based on a Perovskite-Transition-Metal-Dichalcogenide Hybrid Structure

被引：266
作者：
Kang, Dong-Ho [1 ]
Pae, Seong Ryul [2 ]
Shim, Jaewoo [1 ]
Yoo, Gwangwe [1 ]
Jeon, Jaeho [3 ]
Leem, Jung Woo [4 ]
Yu, Jae Su [5 ]
Lee, Sungjoo [3 ]
Shin, Byungha [2 ]
Park, Jin-Hong [1 ]
机构：
[1] Sungkyunkwan Univ, Sch Elect & Elect Engn, Suwon 440746, South Korea
[2] Korea Adv Inst Sci & Technol KAIST, Dept Mat Sci & Engn, Daejeon 305338, South Korea
[3] Sungkyunkwan Univ, SKKU Adv Inst Nanotechnol SAINT, Suwon 440746, South Korea
[4] Purdue Univ, Weldon Sch Biomed Engn, 610 Perdue Mall, W Lafayette, IN 47907 USA
[5] Kyung Hee Univ, Dept Elect & Radio Engn, Yongin 446701, South Korea
来源：
ADVANCED MATERIALS | 2016年 / 28卷 / 35期
基金：
新加坡国家研究基金会;
关键词：
THIN-FILM TRANSISTORS; MOS2; PHOTODETECTOR; SOLAR-CELLS; PHOTOTRANSISTORS; PHOTOLUMINESCENCE; TRANSPARENT;
D O I：
10.1002/adma.201600992
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
An ultrahigh performance MoS2 photodetector with high photoresponsivity (1.94 x 10(6) A W-1) and detectivity (1.29 x 10(12) Jones) under 520 nm and 4.63 pW laser exposure is demonstrated. This photodetector is based on a methylammonium lead halide perovskite/MoS2 hybrid structure with (3-aminopropyl)triethoxysilane doping. The performance degradation caused by moisture is also minimized down to 20% by adopting a new encapsulation bilayer of octadecyltrichlorosilane/polymethyl methacrylate.
引用
收藏
页码：7799 / +
页数：9
相关论文
共 39 条
  • [1] High-Performance, Highly Bendable MoS2 Transistors with High-K Dielectrics for Flexible Low-Power Systems
    Chang, Hsiao-Yu
    Yang, Shixuan
    Lee, Jongho
    Tao, Li
    Hwang, Wan-Sik
    Jena, Debdeep
    Lu, Nanshu
    Akinwande, Deji
    [J]. ACS NANO, 2013, 7 (06) : 5446 - 5452
  • [2] van der Waals Heterojunction Devices Based on Organohalide Perovskites and Two-Dimensional Materials
    Cheng, Hung-Chieh
    Wang, Gongmin
    Li, Dehui
    He, Qiyuan
    Yin, Anxiang
    Liu, Yuan
    Wu, Hao
    Ding, Mengning
    Huang, Yu
    Duan, Xiangfeng
    [J]. NANO LETTERS, 2016, 16 (01) : 367 - 373
  • [3] High-Detectivity Multilayer MoS2 Phototransistors with Spectral Response from Ultraviolet to Infrared
    Choi, Woong
    Cho, Mi Yeon
    Konar, Aniruddha
    Lee, Jong Hak
    Cha, Gi-Beom
    Hong, Soon Cheol
    Kim, Sangsig
    Kim, Jeongyong
    Jena, Debdeep
    Joo, Jinsoo
    Kim, Sunkook
    [J]. ADVANCED MATERIALS, 2012, 24 (43) : 5832 - 5836
  • [4] Chou JB, 2014, ADV MATER, V26, P8041, DOI [10.1002/adma.201403302, 10.1002/adma.201402271]
  • [5] COSTELLO KA, 1990, P SOC PHOTO-OPT INS, V1243, P99, DOI 10.1117/12.19469
  • [6] All Two-Dimensional, Flexible, Transparent, and Thinnest Thin Film Transistor
    Das, Saptarshi
    Gulotty, Richard
    Sumant, Anirudha V.
    Roelofs, Andreas
    [J]. NANO LETTERS, 2014, 14 (05) : 2861 - 2866
  • [7] High-Gain and Low-Driving-Voltage Photodetectors Based on Organolead Triiodide Perovskites
    Dong, Rui
    Fang, Yanjun
    Chae, Jungseok
    Dai, Jun
    Xiao, Zhengguo
    Dong, Qingfeng
    Yuan, Yongbo
    Centrone, Andrea
    Zeng, Xiao Cheng
    Huang, Jinsong
    [J]. ADVANCED MATERIALS, 2015, 27 (11) : 1912 - +
  • [8] Photoluminescence from Chemically Exfoliated MoS2
    Eda, Goki
    Yamaguchi, Hisato
    Voiry, Damien
    Fujita, Takeshi
    Chen, Mingwei
    Chhowalla, Manish
    [J]. NANO LETTERS, 2011, 11 (12) : 5111 - 5116
  • [9] High Performance Molybdenum Disulfide Amorphous Silicon Heterojunction Photodetector
    Esmaeili-Rad, Mohammad R.
    Salahuddin, Sayeef
    [J]. SCIENTIFIC REPORTS, 2013, 3
  • [10] Fang YJ, 2015, NAT PHOTONICS, V9, P679, DOI [10.1038/NPHOTON.2015.156, 10.1038/nphoton.2015.156]
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