Switching characteristics of GaNHFETs in a half bridge package for high temperature applications

被引：57

作者：

Nomura, Takehiko ^{[1
]}

Masuda, Mitsuru ^{[1
]}

Ikeda, Nariaki ^{[1
]}

Yoshida, Seikoh ^{[1
]}

机构：

[1] Furukawa Elect Corp Ltd, Yokohama R&D Labs, GaN Power Elect Team, Yokohama, Kanagawa 2200073, Japan

来源：

IEEE TRANSACTIONS ON POWER ELECTRONICS | 2008年 / 23卷 / 02期

关键词：

GaN; heterojunction field effect transistors (HFETs); high temperature; switching;

D O I：

10.1109/TPEL.2007.915671

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

AlGaN/GaN heterojunction field effect transistors (HFETs) are expected to be a good candidate for power switching application at high temperatures. We designed and fabricated a discrete HFET package and a half bridge module using the AlGaN/GaN HFETs and SiC Schottky barrier diodes (SBDs) for high temperature applications. The half bridge module exhibited good reliability after 250 degrees C and 400 h high temperature storage. Switching characteristics of the AlGaN/GaN HFET were investigated. Qg x Ron, which shows a figure of merit of switching operation, was more than 10 times better than commercial Si MOSFETs. The switching characteristics of the HFET showed no significant degradation up to 225 degrees C.

引用

页码：692 / 697

页数：6

共 10 条

[1] High temperature characteristics of AlGaN/GaN modulation doped field-effect transistors [J].