2D materials and van der Waals heterostructures

被引：6026

作者：

Novoselov, K. S. ^{[1
,2
]}

Mishchenko, A. ^{[1
,2
]}

Carvalho, A. ^{[3
,4
]}

Castro Neto, A. H. ^{[3
,4
]}

机构：

[1] Univ Manchester, Sch Phys & Astron, Oxford Rd, Manchester M13 9PL, Lancs, England

[2] Univ Manchester, Natl Graphene Inst, Manchester M13 9PL, Lancs, England

[3] Natl Univ Singapore, Ctr Adv Mat 2D, 2 Sci Dr 3, Singapore 117542, Singapore

[4] Natl Univ Singapore, Graphene Res Ctr, 2 Sci Dr 3, Singapore 117542, Singapore

来源：

SCIENCE | 2016年 / 353卷 / 6298期

基金：

欧洲研究理事会; 英国工程与自然科学研究理事会; 新加坡国家研究基金会;

关键词：

TRANSITION-METAL DICHALCOGENIDES; HEXAGONAL BORON-NITRIDE; EXCITON BINDING-ENERGY; CHARGE-DENSITY-WAVE; EPITAXIAL-GROWTH; BLACK PHOSPHORUS; LATERAL HETEROSTRUCTURES; 2-DIMENSIONAL MATERIALS; ELECTRONIC-PROPERTIES; VALLEY POLARIZATION;

D O I：

10.1126/science.aac9439

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

The physics of two-dimensional ( 2D) materials and heterostructures based on such crystals has been developing extremely fast. With these new materials, truly 2D physics has begun to appear ( for instance, the absence of long-range order, 2D excitons, commensurate-incommensurate transition, etc.). Novel heterostructure devices-such as tunneling transistors, resonant tunneling diodes, and light-emitting diodes-are also starting to emerge. Composed from individual 2D crystals, such devices use the properties of those materials to create functionalities that are not accessible in other heterostructures. Here we review the properties of novel 2D crystals and examine how their properties are used in new heterostructure devices.

引用

页数：7

共 138 条

[1] Designed Synthesis of van der Waals Heterostructures: The Power of Kinetic Control [J].

Alemayehu, Matti B. ;

Falmbigl, Matthias ;

Ta, Kim ;

Ditto, Jeffrey ;

Medlin, Douglas L. ;

Johnson, David C. .

ANGEWANDTE CHEMIE-INTERNATIONAL EDITION, 2015, 54 (51) :15468-15472

[2] Tunneling spectroscopy of graphene-boron-nitride heterostructures [J].

Amet, F. ;

Williams, J. R. ;

Garcia, A. G. F. ;

Yankowitz, M. ;

Watanabe, K. ;

Taniguchi, T. ;

Goldhaber-Gordon, D. .

PHYSICAL REVIEW B, 2012, 85 (07)

[3] Two-dimensional semiconductor HfSe2 and MoSe2/HfSe2 van der Waals heterostructures by molecular beam epitaxy [J].

Aretouli, K. E. ;

Tsipas, P. ;

Tsoutsou, D. ;

Marquez-Velasco, J. ;

Xenogiannopoulou, E. ;

Giamini, S. A. ;

Vassalou, E. ;

Kelaidis, N. ;

Dimoulas, A. .

APPLIED PHYSICS LETTERS, 2015, 106 (14)

[4] Spin-orbit proximity effect in graphene [J].

Avsar, A. ;

Tan, J. Y. ;

Taychatanapat, T. ;

Balakrishnan, J. ;

Koon, G. K. W. ;

Yeo, Y. ;

Lahiri, J. ;

Carvalho, A. ;

Rodin, A. S. ;

O'Farrell, E. C. T. ;

Eda, G. ;

Castro Neto, A. H. ;

Oezyilmaz, B. .

NATURE COMMUNICATIONS, 2014, 5

[5] Freestanding van der Waals Heterostructures of Graphene and Transition Metal Dichalcogenides [J].

Azizi, Amin ;

Eichfeld, Sarah ;

Geschwind, Gayle ;

Zhang, Kehao ;

Jiang, Bin ;

Mukherjee, Debangshu ;

Hossain, Lorraine ;

Piasecki, Aleksander F. ;

Kabius, Bernd ;

Robinson, Joshua A. ;

Alem, Nasim .

ACS NANO, 2015, 9 (05) :4882-4890

[6]

Baugher BWH, 2014, NAT NANOTECHNOL, V9, P262, DOI [10.1038/NNANO.2014.25, 10.1038/nnano.2014.25]

[7]

Bonaccorso F, 2010, NAT PHOTONICS, V4, P611, DOI [10.1038/NPHOTON.2010.186, 10.1038/nphoton.2010.186]

[8] Hybrid Surface-Phonon-Plasmon Polariton Modes in Graphene/Monolayer h-BN Heterostructures [J].

Brar, Victor W. ;

Jang, Min Seok ;

Sherrott, Michelle ;

Kim, Seyoon ;

Lopez, Josue J. ;

Kim, Laura B. ;

Choi, Mansoo ;

Atwater, Harry .

NANO LETTERS, 2014, 14 (07) :3876-3880

[9] Strong Light-Matter Interactions in Heterostructures of Atomically Thin Films [J].

Britnell, L. ;

Ribeiro, R. M. ;

Eckmann, A. ;

Jalil, R. ;

Belle, B. D. ;

Mishchenko, A. ;

Kim, Y. -J. ;

Gorbachev, R. V. ;

Georgiou, T. ;

Morozov, S. V. ;

Grigorenko, A. N. ;

Geim, A. K. ;

Casiraghi, C. ;

Castro Neto, A. H. ;

Novoselov, K. S. .

SCIENCE, 2013, 340 (6138) :1311-1314

[10] Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures [J].

Britnell, L. ;

Gorbachev, R. V. ;

Jalil, R. ;

Belle, B. D. ;

Schedin, F. ;

Mishchenko, A. ;

Georgiou, T. ;

Katsnelson, M. I. ;

Eaves, L. ;

Morozov, S. V. ;

Peres, N. M. R. ;

Leist, J. ;

Geim, A. K. ;

Novoselov, K. S. ;

Ponomarenko, L. A. .

SCIENCE, 2012, 335 (6071) :947-950

← 1 2 3 4 5 6 7 8 9 10 →