Flexible nanotube electronics

被引：262

作者：

Bradley, K ^{[1
]}

Gabriel, JCP ^{[1
]}

Grüner, G ^{[1
]}

机构：

[1] Nanomix Inc, Emeryville, CA 94608 USA

来源：

NANO LETTERS | 2003年 / 3卷 / 10期

关键词：

D O I：

10.1021/nl0344864

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Nanotube network transistors have been transferred to polymer supports. The polymer-supported networks can be bent through at least 60degrees angles without changing their electronic properties. They operate as p-type field-effect transistors with mobilities of 12 cm(2)/V s, the highest reported values to date for flexible organic transistors. Finally, the networks can be modified chemically to produce n-type transistors. Taken together, these properties provide the basis for high-mobility flexible electronics.

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页码：1353 / 1355

页数：3

相关论文

共 18 条

[1] New air-stable n-channel organic thin film transistors [J].

Bao, ZA ;

Lovinger, AJ ;

Brown, J .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1998, 120 (01) :207-208

[2] Large-scale complementary integrated circuits based on organic transistors [J].

Crone, B ;

Dodabalapur, A ;

Lin, YY ;

Filas, RW ;

Bao, Z ;

LaDuca, A ;

Sarpeshkar, R ;

Katz, HE ;

Li, W .

NATURE, 2000, 403 (6769) :521-523

[3]

Dimitrakopoulos CD, 2002, ADV MATER, V14, P99, DOI 10.1002/1521-4095(20020116)14:2<99::AID-ADMA99>3.0.CO

[4]

2-9

[5] High-mobility nanotube transistor memory [J].

Fuhrer, MS ;

Kim, BM ;

Durkop, T ;

Brintlinger, T .

NANO LETTERS, 2002, 2 (07) :755-759

[6]

GABRIEL JCP, 2003, MAT RES SOC S P, V762

[7] ALL-POLYMER FIELD-EFFECT TRANSISTOR REALIZED BY PRINTING TECHNIQUES [J].

GARNIER, F ;

HAJLAOUI, R ;

YASSAR, A ;

SRIVASTAVA, P .

SCIENCE, 1994, 265 (5179) :1684-1686

[8] All-polymer optoelectronic devices [J].

Ho, PKH ;

Thomas, DS ;

Friend, RH ;

Tessler, N .

SCIENCE, 1999, 285 (5425) :233-236

[9] Plastic transistors in active-matrix displays - The handling of grey levels by these large displays paves the way for electronic paper. [J].

Huitema, HEA ;

Gelinck, GH ;

van der Putten, JBPH ;

Kuijk, KE ;

Hart, CM ;

Cantatore, E ;

Herwig, PT ;

van Breemen, AJJM ;

de Leeuw, DM .

NATURE, 2001, 414 (6864) :599-599

[10] Naphthalenetetracarboxylic diimide-based n-channel transistor semiconductors: Structural variation and thiol-enhanced gold contacts [J].

Katz, HE ;

Johnson, J ;

Lovinger, AJ ;

Li, WJ .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2000, 122 (32) :7787-7792