Flexible nanotube electronics

被引:261
作者
Bradley, K [1 ]
Gabriel, JCP [1 ]
Grüner, G [1 ]
机构
[1] Nanomix Inc, Emeryville, CA 94608 USA
关键词
D O I
10.1021/nl0344864
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Nanotube network transistors have been transferred to polymer supports. The polymer-supported networks can be bent through at least 60degrees angles without changing their electronic properties. They operate as p-type field-effect transistors with mobilities of 12 cm(2)/V s, the highest reported values to date for flexible organic transistors. Finally, the networks can be modified chemically to produce n-type transistors. Taken together, these properties provide the basis for high-mobility flexible electronics.
引用
收藏
页码:1353 / 1355
页数:3
相关论文
共 18 条
  • [1] New air-stable n-channel organic thin film transistors
    Bao, ZA
    Lovinger, AJ
    Brown, J
    [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1998, 120 (01) : 207 - 208
  • [2] Large-scale complementary integrated circuits based on organic transistors
    Crone, B
    Dodabalapur, A
    Lin, YY
    Filas, RW
    Bao, Z
    LaDuca, A
    Sarpeshkar, R
    Katz, HE
    Li, W
    [J]. NATURE, 2000, 403 (6769) : 521 - 523
  • [3] Dimitrakopoulos CD, 2002, ADV MATER, V14, P99, DOI 10.1002/1521-4095(20020116)14:2<99::AID-ADMA99>3.0.CO
  • [4] 2-9
  • [5] High-mobility nanotube transistor memory
    Fuhrer, MS
    Kim, BM
    Durkop, T
    Brintlinger, T
    [J]. NANO LETTERS, 2002, 2 (07) : 755 - 759
  • [6] GABRIEL JCP, 2003, MAT RES SOC S P, V762
  • [7] ALL-POLYMER FIELD-EFFECT TRANSISTOR REALIZED BY PRINTING TECHNIQUES
    GARNIER, F
    HAJLAOUI, R
    YASSAR, A
    SRIVASTAVA, P
    [J]. SCIENCE, 1994, 265 (5179) : 1684 - 1686
  • [8] All-polymer optoelectronic devices
    Ho, PKH
    Thomas, DS
    Friend, RH
    Tessler, N
    [J]. SCIENCE, 1999, 285 (5425) : 233 - 236
  • [9] Plastic transistors in active-matrix displays - The handling of grey levels by these large displays paves the way for electronic paper.
    Huitema, HEA
    Gelinck, GH
    van der Putten, JBPH
    Kuijk, KE
    Hart, CM
    Cantatore, E
    Herwig, PT
    van Breemen, AJJM
    de Leeuw, DM
    [J]. NATURE, 2001, 414 (6864) : 599 - 599
  • [10] Naphthalenetetracarboxylic diimide-based n-channel transistor semiconductors: Structural variation and thiol-enhanced gold contacts
    Katz, HE
    Johnson, J
    Lovinger, AJ
    Li, WJ
    [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2000, 122 (32) : 7787 - 7792