Polarization of porous silicon photoluminescence: Alignment and built-in anisotropy

被引：11
|
作者：
Kovalev, D
BenChorin, M
Diener, J
Koch, F
Kux, A
Efros, AL
Rosen, M
Gippius, NA
Tikhodeev, SG
机构：
[1] UNIV GRENOBLE 1,SPECTROMETRIE PHYS LAB,F-38402 ST MARTIN DHERES,FRANCE
[2] USN,RES LAB,BEAM THEORY SECT,WASHINGTON,DC 20375
[3] RUSSIAN ACAD SCI,INST GEN PHYS,MOSCOW 117333,RUSSIA
来源：
THIN SOLID FILMS | 1996年 / 276卷 / 1-2期
关键词：
luminescence; anisotropy; dielectric properties; silicon;
D O I：
10.1016/0040-6090(95)08074-0
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We report the observation of the anisotropy of the polarization properties of the porous Si photoluminescence. In the edge excitation geometry (exciting light incident on a cleaved edge of the sample) the luminescence polarization is aligned mainly in the [100] direction normal to the surface. The effect is described within the framework of a dielectric model in which porous Si is considered as an aggregate of slightly deformed, elongated and/or flattened, dielectric elliptical Si nanocrystals with preferred orientation normal to the surface.
引用
收藏
页码：120 / 122
页数：3
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