High relative permittivity, low dielectric loss and good thermal stability of BaTiO3-bi(Mg0.5Zr0.5)O3 solid solution

被引:57
作者
Chen, Xiuli [1 ]
Chen, Jie [1 ]
Ma, Dandan [1 ]
Fang, Liang [1 ]
Zhou, Huanfu [1 ]
机构
[1] Guilin Univ Technol, Minist Prov Jointly Constructed Cultivat Base Sta, Key Lab New Proc Technol Nonferrous Met & Mat, Minist Educ,Sch Mat Sci & Engn, Guilin 541004, Peoples R China
关键词
Elevated temperature stability; Relaxors; Dielectrics; HIGH-TEMPERATURE DIELECTRICS; BARIUM-TITANATE; PHASE-TRANSITION; CERAMICS; BEHAVIOR; RELAXOR; RAMAN; MICROSTRUCTURE; EVOLUTION;
D O I
10.1016/j.ceramint.2014.10.003
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
(1-x)BaTiO3-xBi(Mg0.5Zr0.5)O-3 (BT-BMZ, x=00.1) ceramics were fabricated via a conventional solid-state reaction method. The phase transition, microstructure and dielectric performances of the composites were investigated. It is intriguing that the relative permittivity (epsilon(r)) increased rapidly (> 10(5)) at phase transition temperature by adding small amounts of BMZ (x=0.01). With further increasing BMZ content (0.06 <= x <= 0.1), er was deteriorated slightly, however, the temperature independence of permittivity was significantly improved (Delta epsilon/epsilon(200) degrees(C) < -15%) over a wide temperature range of 200 degrees C400 degrees C at 10 kHz. Additionally, the high relative permittivity (similar to 3000-7000) along with a low dielectric loss (<9%) were also obtained, comparisons of dielectric properties with other materials proposed for high-temperature capacitor applications indicated that these compositions are promising dielectric materials for high temperature capacitor. This work can provide a roadmap to obtain a temperature stable dielectric ceramic with high relative permittivity and low dielectric loss. (C) 2014 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
引用
收藏
页码:2081 / 2088
页数:8
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