Transformer-Based Doherty Power Amplifiers for mm-Wave Applications in 40-nm CMOS

被引：113

作者：

Kaymaksut, Ercan ^{[1
]}

Zhao, Dixian ^{[1
]}

Reynaert, Patrick ^{[1
]}

机构：

[1] Katholieke Univ Leuven, Dept Elect Engn ESAT, Microelect & Sensors Div MICAS, B-3001 Leuven, Belgium

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2015年 / 63卷 / 04期

关键词：

Back-off efficiency; CMOS; Doherty power amplifier (PA); millimeter-wave (mm-wave) backhaul;

D O I：

10.1109/TMTT.2015.2409255

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a power amplifier (PA) topology to improve the back-off efficiency and the linearity of millimeter-wave (mm-wave) PAs without area overhead. In this paper, an asymmetrical series power combiner with LC tuning circuits is proposed to mimic the Doherty operation. Due to high back-off efficiency and high linearity behavior, the proposed Doherty topology well suits for E-band communication applications. Two transformer-based E-band PAs are designed and measured to demonstrate the proposed mm-wave Doherty concept. The first implementation achieves 16.2-dBm output power with a of 15.2 dBm using a 0.9-V supply. The second implementation demonstrates 21-dBm output power with a power-added efficiency (PAE) of 13.6% at a 1.5-V supply. The PAE at 6-dB power back-off is still as high as 7%.

引用

页码：1186 / 1192

页数：7