Effects of Scaling in SEE and TID Response of High Density NAND Flash Memories

被引：26

作者：

Irom, Farokh ^{[1
]}

Nguyen, Duc N. ^{[1
]}

Underwood, Mark L. ^{[1
]}

Virtanen, Ari ^{[2
]}

机构：

[1] CALTECH, Jet Prop Lab, Pasadena, CA 91109 USA

[2] Univ Jyvaskyla, Dept Phys, Accelerator Lab, Jyvaskyla, Finland

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2010年 / 57卷 / 06期

基金：

美国国家航空航天局;

关键词：

Floating gate; nonvolatile memory; single event effect; single event upset; single level; total ionizing; COMMERCIAL NAND; RADIATION;

D O I：

10.1109/TNS.2010.2084102

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Heavy ion single-event effect (SEE) measurements and total ionizing dose (TID) response for Micron Technology single-level cell 1, 2, 4, 8 Gb commercial NAND flash memory and multi-level cell 8, 16, 32 Gb are reported. The heavy ion measurements were extended down to LET 0.1 MeV-cm(2)/mg. Scaling effects in SEE and TID response are discussed. Floating gate bit error upset cross section does not scale with feature size at high LETs, except for single-level cell 8 Gb device which is built with 51 nm processes. The threshold LET does not change with scaling. Charge pump TID degradation and standby current improves with scaling. In general, the effect of radiation is either unchanged or is less severe for highly scaled NAND flash memories.

引用

收藏

页码：3329 / 3335

页数：7

相关论文

共 18 条

[1] TID Sensitivity of NAND Flash Memory Building Blocks [J].

Bagatin, Marta ;

Cellere, Giorgio ;

Gerardin, Simone ;

Paccagnella, Alessandro ;

Visconti, Angelo ;

Beltrami, Silvia .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2009, 56 (04) :1909-1913

[2] Key Contributions to the Cross Section of NAND Flash Memories Irradiated With Heavy Ions [J].

Bagatin, Marta ;

Gerardin, Simone ;

Cellere, Giorgio ;

Paccagnella, Alessandro ;

Visconti, Angelo ;

Beltrami, Silvia ;

Harboe-Sorensen, Reno ;

Virtanen, Ari .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2008, 55 (06) :3302-3308

[3] Angular dependence of heavy ion effects in Floating Gate memory arrays [J].

Cellere, G. ;

Paccagnella, A. ;

Visconti, A. ;

Bonanomi, M. ;

Harboe-Sorensen, R. ;

Virtanen, A. .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2007, 54 (06) :2371-2378

[4]

GLIEM F, COMMUNICATION

[5] Single event effect characterization of high density commercial NAND and NOR nonvolatile flash memories [J].

Irom, Farokh ;

Nguyen, Duc N. .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2007, 54 (06) :2547-2553

[6] Single-event upset and scaling trends in new generation of the commercial SOI PowerPC microprocessors [J].

Irom, Farokh ;

Farmanesh, Farhad ;

Kouba, Coy K. .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2006, 53 (06) :3563-3568

[7] Catastrophic Failure in Highly Scaled Commercial NAND Flash Memories [J].

Irom, Farokh ;

Nguyen, Duc N. ;

Bagatin, Marta ;

Cellere, Giorgio ;

Gerardin, Simone ;

Paccagnella, Alessandro .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2010, 57 (01) :266-271

[8] Radiation effects in advanced microelectronics technologies [J].

Johnston, AH .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1998, 45 (03) :1339-1354

[9] MODELING DIFFUSION AND COLLECTION OF CHARGE FROM IONIZING-RADIATION IN SILICON DEVICES [J].

KIRKPATRICK, S .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (11) :1742-1753

[10] SEE sensitivities of selected advanced flash and first-in-first-out memories [J].

Koga, R ;

Tran, V ;

George, J ;

Crawford, K ;

Crain, S ;

Zakrzewski, M ;

Yu, P .

2004 IEEE RADIATION EFFECTS DATA WORKSHOP, WORKSHOP RECORD, 2004, :47-53