Inter-band transition effects in spin generation

被引：7

作者：

Miah, M. Idrish ^{[1
,2
,3
]}

Gray, E. MacA. ^{[1
,2
]}

机构：

[1] Griffith Univ, Nanoscale Sci & Technol Ctr, Brisbane, Qld 4111, Australia

[2] Griffith Univ, Sch Biomol & Phys Sci, Brisbane, Qld 4111, Australia

[3] Univ Chittagong, Dept Phys, Chittagong 4331, Bangladesh

来源：

CURRENT OPINION IN SOLID STATE & MATERIALS SCIENCE | 2010年 / 14卷 / 3-4期

关键词：

Semiconductor; Spin transport; Spin relaxation;

D O I：

10.1016/j.cossms.2009.04.002

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We investigated the inter-band transition effects in spin generation in semiconductors by measuring the time-resolved differential transmission of the samples. The degree of polarization pumped with the single-photon excitation of electrons was found to decay with a time constant of 210 ps, giving a spin relaxation time of 420 ps, and to be enhanced with decreasing temperature. We also found that the polarization depends strongly on the excitation photon energy. The results are discussed based on the selection rules governing optical transitions from heavy-hole, light-hole and split-off states to conduction band states in a bulk sample. (C) 2009 Elsevier Ltd. All rights reserved.

引用

页码：49 / 52

页数：4

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